MOMBE selective infill growth of InP : Si and InGaAs : Si and large area MOMBE regrowth

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 339-344

  Schelhase, S ^a   Bottcher J ^a   Gibis, R ^a   Kunzel H ^a   Paraskevopoulos, A ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SILICON; SURFACES;

DEFECT FREE VERTICAL INTERFACES; INDIUM GALLIUM ARSENIDE; SELECTIVE INFILL GROWTH;

EPITAXIAL GROWTH;

EID: 0030190229     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01063-7     Document Type: Article

References (9)

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