메뉴 건너뛰기




Volumn 6, Issue , 2015, Pages

Exploring atomic defects in molybdenum disulphide monolayers

Author keywords

[No Author keywords available]

Indexed keywords

DISULFIDE; MOLYBDENUM; SULFUR;

EID: 84923379977     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7293     Document Type: Article
Times cited : (1308)

References (55)
  • 1
    • 27744534165 scopus 로고    scopus 로고
    • Two-dimensional gas of massless Dirac fermions in graphene
    • Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200 (2005).
    • (2005) Nature , vol.438 , pp. 197-200
    • Novoselov, K.S.1
  • 2
  • 3
    • 27744475163 scopus 로고    scopus 로고
    • Experimental observation of the quantum Hall effect and Berry's phase in graphene
    • Zhang, Y. B., Tan, Y. W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201-204 (2005).
    • (2005) Nature , vol.438 , pp. 201-204
    • Zhang, Y.B.1    Tan, Y.W.2    Stormer, H.L.3    Kim, P.4
  • 4
    • 36849020967 scopus 로고    scopus 로고
    • Electronic properties of grapheme
    • Novoselov, K. S. et al. Electronic properties of graphene. Phys. Stat. Sol. B 244, 4106-4111 (2007).
    • (2007) Phys. Stat. Sol. B , vol.244 , pp. 4106-4111
    • Novoselov, K.S.1
  • 5
    • 66749119012 scopus 로고    scopus 로고
    • Large-area synthesis of high-quality and uniform graphene films on copper foils
    • Li, X. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312-1314 (2009).
    • (2009) Science , vol.324 , pp. 1312-1314
    • Li, X.1
  • 6
    • 84869074729 scopus 로고    scopus 로고
    • Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
    • Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699-712 (2012).
    • (2012) Nat. Nanotechnol. , vol.7 , pp. 699-712
    • Wang, Q.H.1    Kalantar-Zadeh, K.2    Kis, A.3    Coleman, J.N.4    Strano, M.S.5
  • 7
    • 84860361457 scopus 로고    scopus 로고
    • Stable single-layer MX2 transition-metal oxides and dichalcogenides in a honeycomb-like structure
    • Ataca, C., Sahin, H. & Ciraci, S. Stable single-layer MX2 transition-metal oxides and dichalcogenides in a honeycomb-like structure. J. Phys. Chem. C. 116, 8983-8999 (2012).
    • (2012) J. Phys. Chem. C. , vol.116 , pp. 8983-8999
    • Ataca, C.1    Sahin, H.2    Ciraci, S.3
  • 8
    • 77957204738 scopus 로고    scopus 로고
    • Atomically thin MoS2: A new direct-gap semiconductor
    • Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
    • (2010) Phys. Rev. Lett. , vol.105 , pp. 136805
    • Mak, K.F.1    Lee, C.2    Hone, J.3    Shan, J.4    Heinz, T.F.5
  • 9
    • 77951069162 scopus 로고    scopus 로고
    • Emerging photoluminesence in monolayer MoS2
    • Splendiani, A. et al. Emerging photoluminesence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
    • (2010) Nano Lett. , vol.10 , pp. 1271-1275
    • Splendiani, A.1
  • 10
    • 84864881664 scopus 로고    scopus 로고
    • Valley polarization in MoS2 monolayers by optical pumping
    • Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 7, 490-493 (2012).
    • (2012) Nat. Nanotechnol. , vol.7 , pp. 490-493
    • Zeng, H.1    Dai, J.2    Yao, W.3    Xiao, D.4    Cui, X.5
  • 11
    • 84864874878 scopus 로고    scopus 로고
    • Control of valley polarization in monolayer MoS2 by optical helicity
    • Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotechnol. 7, 494-498 (2012).
    • (2012) Nat. Nanotechnol. , vol.7 , pp. 494-498
    • Mak, K.F.1    He, K.2    Shan, J.3    Heinz, T.F.4
  • 12
    • 84863325332 scopus 로고    scopus 로고
    • Valley-selective circular dichroism of monolayer molybdenum disulphide
    • Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nat. Commun. 3, 887 (2012).
    • (2012) Nat. Commun. , vol.3 , pp. 887
    • Cao, T.1
  • 14
    • 84866104969 scopus 로고    scopus 로고
    • High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
    • Kim, S. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 3, 1011 (2012).
    • (2012) Nat. Commun. , vol.3 , pp. 1011
    • Kim, S.1
  • 15
    • 84878321486 scopus 로고    scopus 로고
    • Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating
    • Perera, M. M. et al. Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating. ACS Nano 7, 4449-4458 (2013).
    • (2013) ACS Nano , vol.7 , pp. 4449-4458
    • Perera, M.M.1
  • 16
  • 17
    • 84897998266 scopus 로고    scopus 로고
    • Transport properties of monolayer MoS2 grown by chemical vapor deposition
    • Schmidt, H. et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett. 14, 1909-1913 (2014).
    • (2014) Nano Lett. , vol.14 , pp. 1909-1913
    • Schmidt, H.1
  • 18
    • 84941053281 scopus 로고    scopus 로고
    • Interface engineering for high-performance top-gated MoS2 field-effect transistors
    • Zou, X. M. et al. Interface engineering for high-performance top-gated MoS2 field-effect transistors. Adv. Mater. 26, 6255-6261 (2014).
    • (2014) Adv. Mater. , vol.26 , pp. 6255-6261
    • Zou, X.M.1
  • 19
    • 84883179670 scopus 로고    scopus 로고
    • Mobility engineering and a metal-insulator transition in monolayer MoS2
    • Radisavljevic, B. & Kis, A. Mobility engineering and a metal-insulator transition in monolayer MoS2. Nat. Mater. 12, 815-820 (2013).
    • (2013) Nat. Mater. , vol.12 , pp. 815-820
    • Radisavljevic, B.1    Kis, A.2
  • 20
    • 84876015113 scopus 로고    scopus 로고
    • Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition
    • Wang, X., Feng, H., Wu, Y. & Jiao, L. Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. J. Am. Chem. Soc. 135, 5304-5307 (2013).
    • (2013) J. Am. Chem. Soc. , vol.135 , pp. 5304-5307
    • Wang, X.1    Feng, H.2    Wu, Y.3    Jiao, L.4
  • 21
    • 84860329324 scopus 로고    scopus 로고
    • Synthesis of large-area MoS2 atomic layers with chemical vapor deposition
    • Lee, Y.-H. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320-2325 (2012).
    • (2012) Adv. Mater. , vol.24 , pp. 2320-2325
    • Lee, Y.-H.1
  • 22
    • 84858182487 scopus 로고    scopus 로고
    • Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates
    • Liu, K.-K. et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 12, 1538-1544 (2012).
    • (2012) Nano Lett. , vol.12 , pp. 1538-1544
    • Liu, K.-K.1
  • 23
    • 84862294401 scopus 로고    scopus 로고
    • Van der Waals epitaxy of MoS2 layers using graphene as growth templates
    • Shi, Y. et al. van der Waals epitaxy of MoS2 layers using graphene as growth templates. Nano Lett. 12, 2784-2791 (2012).
    • (2012) Nano Lett. , vol.12 , pp. 2784-2791
    • Shi, Y.1
  • 24
    • 84875652036 scopus 로고    scopus 로고
    • Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization
    • Wu, S. et al. Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization. ACS Nano 7, 2768-2772 (2013).
    • (2013) ACS Nano , vol.7 , pp. 2768-2772
    • Wu, S.1
  • 25
    • 84900021208 scopus 로고    scopus 로고
    • Growth of large-area 2D MoS2(1-x) Se2x semiconductor alloys
    • Feng, Q. et al. Growth of large-area 2D MoS2(1-x) Se2x semiconductor alloys. Adv. Mater. 26, 2648-2653 (2014).
    • (2014) Adv. Mater. , vol.26 , pp. 2648-2653
    • Feng, Q.1
  • 26
    • 84874594683 scopus 로고    scopus 로고
    • Measurement of mobility in dual-gated MoS2 transistors
    • Fuhrer, M. S. & Hone, J. Measurement of mobility in dual-gated MoS2 transistors. Nat. Nanotechnol. 8, 146-147 (2013).
    • (2013) Nat. Nanotechnol. , vol.8 , pp. 146-147
    • Fuhrer, M.S.1    Hone, J.2
  • 27
    • 84874640657 scopus 로고    scopus 로고
    • Measurement of mobility in dual-gated MoS2 transistors
    • Radisavljevic, B. & Kis, A. Measurement of mobility in dual-gated MoS2 transistors. Nat. Nanotechnol. 8, 147-148 (2013).
    • (2013) Nat. Nanotechnol. , vol.8 , pp. 147-148
    • Radisavljevic, B.1    Kis, A.2
  • 28
    • 84919367616 scopus 로고    scopus 로고
    • Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
    • Yu, Z. et al. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat. Commun. 5, 5290 (2014).
    • (2014) Nat. Commun. , vol.5 , pp. 5290
    • Yu, Z.1
  • 29
    • 84879112432 scopus 로고    scopus 로고
    • Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films
    • Liu, H. et al. Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. Nano Lett. 13, 2640-2646 (2013).
    • (2013) Nano Lett. , vol.13 , pp. 2640-2646
    • Liu, H.1
  • 30
    • 84889245669 scopus 로고    scopus 로고
    • Hopping transport through defect-induced localized states in molybdenum disulphide
    • Qiu, H. et al. Hopping transport through defect-induced localized states in molybdenum disulphide. Nat. Commun. 4, 2642 (2013).
    • (2013) Nat. Commun. , vol.4 , pp. 2642
    • Qiu, H.1
  • 31
    • 84863941695 scopus 로고    scopus 로고
    • Two-dimensional transition metal dichalcogenides under electron irradiation: Defect production and doping
    • Komsa, H.-P. et al. Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping. Phys. Rev. Lett. 109, 035503 (2012).
    • (2012) Phys. Rev. Lett. , vol.109 , pp. 035503
    • Komsa, H.-P.1
  • 32
    • 84880831944 scopus 로고    scopus 로고
    • Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
    • Najmaei, S. et al. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat. Mater. 12, 754-759 (2013).
    • (2013) Nat. Mater. , vol.12 , pp. 754-759
    • Najmaei, S.1
  • 33
    • 80054983584 scopus 로고    scopus 로고
    • Nature of electronic states in atomically thin MoS2 field-effect transistors
    • Ghatak, S., Pal, A. N. & Ghosh, A. Nature of electronic states in atomically thin MoS2 field-effect transistors. ACS Nano 5, 7707-7712 (2011).
    • (2011) ACS Nano , vol.5 , pp. 7707-7712
    • Ghatak, S.1    Pal, A.N.2    Ghosh, A.3
  • 34
    • 84881596995 scopus 로고    scopus 로고
    • Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors
    • Li, S.-L. et al. Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors. Nano Lett. 13, 3546-3552 (2013).
    • (2013) Nano Lett. , vol.13 , pp. 3546-3552
    • Li, S.-L.1
  • 35
    • 84879108519 scopus 로고    scopus 로고
    • Intrinsic structural defects in monolayer molybdenum disulfide
    • Zhou, W. et al. Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett. 13, 2615-2622 (2013).
    • (2013) Nano Lett. , vol.13 , pp. 2615-2622
    • Zhou, W.1
  • 36
    • 84878237613 scopus 로고    scopus 로고
    • Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
    • van der Zande, A. M. et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 12, 554-561 (2013).
    • (2013) Nat. Mater. , vol.12 , pp. 554-561
    • Van Der Zande, A.M.1
  • 39
    • 84880884445 scopus 로고    scopus 로고
    • From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation
    • Komsa, H. P., Kurasch, S., Lehtinen, O., Kaiser, U. & Krasheninnikov, A. V. From point to extended defects in two-dimensional MoS2: evolution of atomic structure under electron irradiation. Phys. Rev. B 88, 035301 (2013).
    • (2013) Phys. Rev. B , vol.88 , pp. 035301
    • Komsa, H.P.1    Kurasch, S.2    Lehtinen, O.3    Kaiser, U.4    Krasheninnikov, A.V.5
  • 40
    • 84894608525 scopus 로고    scopus 로고
    • Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
    • Zhu, W. et al. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 5, 3087 (2014).
    • (2014) Nat. Commun. , vol.5 , pp. 3087
    • Zhu, W.1
  • 41
    • 20144380685 scopus 로고    scopus 로고
    • First principles methods using CASTEP
    • Clark, S. J. et al. First principles methods using CASTEP. Z. Kristallogr. 220, 567-570 (2005).
    • (2005) Z. Kristallogr. , vol.220 , pp. 567-570
    • Clark, S.J.1
  • 42
    • 2442537377 scopus 로고    scopus 로고
    • Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
    • Kresse, G. & Furthmuller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).
    • (1996) Phys. Rev. B , vol.54 , pp. 11169-11186
    • Kresse, G.1    Furthmuller, J.2
  • 43
    • 84884215670 scopus 로고    scopus 로고
    • Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2
    • Baugher, B. W. H., Churchill, H. O. H., Yang, Y. & Jarillo-Herrero, P. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. Nano Lett. 13, 4212-4216 (2013).
    • (2013) Nano Lett. , vol.13 , pp. 4212-4216
    • Baugher, B.W.H.1    Churchill, H.O.H.2    Yang, Y.3    Jarillo-Herrero, P.4
  • 44
    • 84873606296 scopus 로고    scopus 로고
    • High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
    • Bao, W. Z., Cai, X. H., Kim, D., Sridhara, K. & Fuhrer, M. S. High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects. Appl. Phys. Lett. 102, 042104 (2013).
    • (2013) Appl. Phys. Lett. , vol.102 , pp. 042104
    • Bao, W.Z.1    Cai, X.H.2    Kim, D.3    Sridhara, K.4    Fuhrer, M.S.5
  • 45
    • 0028747841 scopus 로고
    • On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
    • Takagi, S.-i., Toriumi, A., Iwase, M. & Tango, H. On the universality of inversion layer mobility in Si MOSFET's: part I-effects of substrate impurity concentration. IEEE Trans. Electr. Dev. 41, 2357-2362 (1994).
    • (1994) IEEE Trans. Electr. Dev. , vol.41 , pp. 2357-2362
    • Takagi, S.-I.1    Toriumi, A.2    Iwase, M.3    Tango, H.4
  • 46
    • 84904616293 scopus 로고    scopus 로고
    • High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
    • Qiao, J. S. et al. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014).
    • (2014) Nat. Commun. , vol.5 , pp. 4475
    • Qiao, J.S.1
  • 47
    • 84879890739 scopus 로고    scopus 로고
    • Multiscale modeling for graphene-based nanoscale transistors
    • Fiori, G. & Iannaccone, G. Multiscale modeling for graphene-based nanoscale transistors. Proc. IEEE 101, 1653-1669 (2013).
    • (2013) Proc. IEEE , vol.101 , pp. 1653-1669
    • Fiori, G.1    Iannaccone, G.2
  • 48
    • 84859085243 scopus 로고    scopus 로고
    • Phonon-limited mobility in n-type single-layer MoS2 from first principles
    • Kaasbjerg, K., Thygesen, K. S. & Jacobsen, K. W. Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys. Rev. B 85, 115317 (2012).
    • (2012) Phys. Rev. B , vol.85 , pp. 115317
    • Kaasbjerg, K.1    Thygesen, K.S.2    Jacobsen, K.W.3
  • 50
    • 4243943295 scopus 로고    scopus 로고
    • Generalized gradient approximation made simple
    • Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865-3868 (1996).
    • (1996) Phys. Rev. Lett. , vol.77 , pp. 3865-3868
    • Perdew, J.P.1    Burke, K.2    Ernzerhof, M.3
  • 51
    • 33750559983 scopus 로고    scopus 로고
    • Semiempirical GGA-type density functional constructed with a long-range dispersion correction
    • Grimme, S. Semiempirical GGA-type density functional constructed with a long-range dispersion correction. J. Comput. Chem. 27, 1787-1799 (2006).
    • (2006) J. Comput. Chem. , vol.27 , pp. 1787-1799
    • Grimme, S.1
  • 52
    • 25744460922 scopus 로고
    • Projector augmented-wave method
    • Blochl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953-17979 (1994).
    • (1994) Phys. Rev. B , vol.50 , pp. 17953-17979
    • Blochl, P.E.1
  • 53
    • 79960645403 scopus 로고    scopus 로고
    • Van der waals density functionals applied to solids
    • Klimes, J., Bowler, D. R. & Michaelides, A. Van der waals density functionals applied to solids. Phys. Rev. B 83, 195131 (2011).
    • (2011) Phys. Rev. B , vol.83 , pp. 195131
    • Klimes, J.1    Bowler, D.R.2    Michaelides, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.