High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Applied Physics Letters

Volumn 78, Issue 9, 2001, Pages 1252-1254

  Lefebvre, P ^a   Morel, A ^a   Gallart, M ^a   Taliercio, T ^a   Allegre J ^a   Gil, B ^a   Mathieu, H ^a   Damilano, B ^b   Grandjean, N ^b   Massies, J ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b Cent de Recherche sur   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141858877     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1351517     Document Type: Article

References (15)

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