Exploiting piezoelectric charge for high performance graded InGaN nanowire solar cells

Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

  Golam Sarwar, A T M ^a   Myers, R C ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY BARRIER HEIGHT; GRADED JUNCTION; HOLE TRANSPORTS; OVERALL EFFICIENCY; P-TYPE CONDUCTIVITY; PIEZOELECTRIC CHARGE; POLARIZATION CHARGES; STRAIN FIELDS; VALENCE BAND BARRIERS;

EFFICIENCY; GALLIUM NITRIDE; HETEROJUNCTIONS; NANOWIRES; POLARIZATION; SOLAR CELLS;

PIEZOELECTRICITY;

EID: 84867530254     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757990     Document Type: Article

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