Mixed polarity in polarization-induced p-n junction nanowire light-emitting diodes

Nano Letters

Volumn 13, Issue 7, 2013, Pages 3029-3035

  Carnevale, Santino D ^a   Kent, Thomas F ^a   Phillips, Patrick J ^c   Sarwar, A T M G ^a   Selcu, Camelia ^b   Klie, Robert F ^c   Myers, Roberto C ^a,b  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

conductive atomic force microscopy; light emitting diodes; molecular beam epitaxy; Nanostructures; nitrides; polarization

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTROLUMINESCENCE SPECTROSCOPY; MULTIPLE METHODS; NANOWIRE LIGHT EMITTING DIODES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PREFERRED ORIENTATIONS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SELECTIVE ETCHING;

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CATALYSTS; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; ETCHING; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; NITRIDES; POLARIZATION; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 84880175368     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl400200g     Document Type: Article

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