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Volumn 1, Issue 18, 2013, Pages 3078-3083
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Formation of p-n junction with stable p-doping in graphene field effect transistors using deep UV irradiation
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITIONS (CVD);
DEEP ULTRAVIOLET;
GRAPHENE DEVICES;
GRAPHENE FIELD-EFFECT TRANSISTORS;
LIGHT IRRADIATIONS;
RESISTANCE INCREASE;
RESISTIVITY MEASUREMENT;
TRANSPORT MEASUREMENTS;
CHEMICAL VAPOR DEPOSITION;
ELECTRONIC PROPERTIES;
FIELD EFFECT TRANSISTORS;
SEMICONDUCTOR JUNCTIONS;
THRESHOLD VOLTAGE;
GRAPHENE;
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EID: 84879515147
PISSN: 20507534
EISSN: 20507526
Source Type: Journal
DOI: 10.1039/c3tc30232f Document Type: Article |
Times cited : (44)
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References (38)
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