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Volumn 1, Issue 18, 2013, Pages 3078-3083

Formation of p-n junction with stable p-doping in graphene field effect transistors using deep UV irradiation

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITIONS (CVD); DEEP ULTRAVIOLET; GRAPHENE DEVICES; GRAPHENE FIELD-EFFECT TRANSISTORS; LIGHT IRRADIATIONS; RESISTANCE INCREASE; RESISTIVITY MEASUREMENT; TRANSPORT MEASUREMENTS;

EID: 84879515147     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c3tc30232f     Document Type: Article
Times cited : (44)

References (38)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.