Raman fingerprint of doping due to metal adsorbates on graphene

Journal of Physics Condensed Matter

Volumn 24, Issue 33, 2012, Pages

  Iqbal, M W ^a   Singh, Arun Kumar ^a   Iqbal, M Z ^a   Eom, Jonghwa ^a  

^a Sejong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT THICKNESS; DOPING EFFECTS; GATE VOLTAGES; METAL FILM; N-TYPE DOPING; P-TYPE DOPING; PEAK FREQUENCIES; PEAK POSITION; RAMAN BANDS; SINGLE LAYER; THIN LAYERS; TRANSPORT MEASUREMENTS;

ADSORBATES; CHEMICAL VAPOR DEPOSITION; CHROMIUM; ELECTRONIC PROPERTIES; METALS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; TITANIUM;

GRAPHENE;

EID: 84864490077     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/33/335301     Document Type: Article

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