Domain wall motion device for nonvolatile memory and logic - size dependence of device properties

IEEE Transactions on Magnetics

Volumn 50, Issue 11, 2014, Pages

  Fukami, Shunsuke ^a   Yamanouchi, Michihiko ^a   Ikeda, Shoji ^a   Ohno, Hideo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Co Ni multilayer; magnetic domain wall (DW); magnetic random access memory; scalability; spintronics

Indexed keywords

MAGNETIC DOMAINS; MAGNETIC STORAGE; MAGNETIC STRUCTURE; MAGNETOELECTRONICS; MULTILAYERS; NANOWIRES; RANDOM ACCESS STORAGE; SCALABILITY;

DEVICE PROPERTIES; DOMAIN WALL MOTION; HIGH SCALABILITIES; LOGIC TECHNOLOGY; MAGNETIC RANDOM ACCESS MEMORY; NON-VOLATILE MEMORY; OPERATION METHODS; RETENTION PROPERTIES;

DOMAIN WALLS;

EID: 84915803938     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2014.2321396     Document Type: Article

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