Intrinsic threshold current density of domain wall motion in nanostrips with perpendicular magnetic anisotropy for use in low-write-current MRAMs

IEEE Transactions on Magnetics

Volumn 44, Issue 11 PART 1, 2008, Pages 2539-2542

  Fukami, Shunsuke ^a   Suzuki, Tetsuhiro ^a   Ohshima, Norikazu ^a   Nagahara, Kiyokazu ^a   Ishiwata, Nobuyuki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Current induced domain wall (DW) motion; Magnetic random access memory (MRAM); Micromagnetic simulation; Perpendicular magnetic anisotropy (PMA)

Indexed keywords

EID: 66949123314     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2008.2002370     Document Type: Article

References (12)

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