Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Honjo, H ^a   Fukami, S ^b   Nebashi, R ^a   Ishiwata, N ^b   Miura, S ^a   Sakimura, N ^a   Sugibayashi, T ^a   Kasai, N ^b   Ohno, H ^b  

^a NEC CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FE FILMS; FREE LAYERS; MAGNETIC TUNNELING JUNCTIONS; MAGNETORESISTANCE RATIO; MGO; MR RATIO; SWITCHING CURRENTS; THIN FE FILMS; TUNNELING BARRIER;

ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; ELECTRIC RESISTANCE; LOGIC CIRCUITS; METALLIC FILMS;

MAGNETIC DEVICES;

EID: 84861722641     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3675268     Document Type: Conference Paper

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