Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As

Physical Review Letters

Volumn 96, Issue 9, 2006, Pages

  Yamanouchi, M ^a   Chiba, D ^a,b   Matsukura, F ^a,b   Dietl, T ^a,b,c,d   Ohno, H ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c INSTITUTE OF PHYSICS   (Poland)

^d UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETO-OPTICAL KERR EFFECT; SPIN TRANSFER; SPIN-FLIP TRANSITIONS;

ARSENIC; ELECTRIC FIELD EFFECTS; GALLIUM; MAGNETIC ANISOTROPY; MAGNETIC SEMICONDUCTORS; MANGANESE;

FERROMAGNETIC MATERIALS;

EID: 33644769069     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.96.096601     Document Type: Article

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