Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Suzuki, T ^a   Tanigawa, H ^a   Kobayashi, Y ^a   Mori, K ^a   Ito, Y ^a   Ozaki, Y ^a   Suemitsu, K ^a   Kitamura, T ^a   Nagahara, K ^a   Kariyada, E ^a   Ohshima, N ^a   Fukami, S ^b   Yamanouchi, M ^b   Ikeda, S ^b   Hayashi, M ^c   Sakao, M ^a   Ohno, H ^b  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN WALL MOTION; FREE LAYERS; HARD MAGNETS; LOW CURRENTS; MAGNETIC TUNNEL JUNCTION; MR RATIO;

COBALT COMPOUNDS;

MAGNETS;

EID: 84883353094     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Fukami et al., Symp. On VLSI Tech., pp.230, 2009.
2. S. Fukami et al., Symp. On VLSI Tech., pp.61, 2012.
3. S. Ikeda et al., Nature Mater. 9, pp.721, 2010.
4. S. Fukami et al., Appl. Phys. Lett. 98, 082504, 2011.
5. H. Sato et al., Appl. Phys. Lett. 99, 042501, 2011.