Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

Journal of Applied Physics

Volumn 115, Issue 17, 2014, Pages

  Honjo, H ^a   Fukami, S ^b   Ishihara, K ^a   Nebashi, R ^a   Kinoshita, K ^b   Tokutome, K ^a   Murahata, M ^b   Miura, S ^a   Sakimura, N ^a   Sugibayashi, T ^a   Kasai, N ^b   Ohno, H ^b  

^a NEC CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COBALT COMPOUNDS; ELECTRON ENERGY LOSS SPECTROSCOPY; KRYPTON;

BORON CONTENT; MAGNETIC SWITCHING; MAGNETIC TUNNELING JUNCTIONS; MAGNETORESISTANCE RATIO; PERPENDICULAR ANISOTROPY; SENSING LAYERS; SMALL CELLS; SPUTTERING GAS;

MAGNETIC DEVICES;

EID: 84903904861     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4868623     Document Type: Conference Paper

References (15)

1. S. Fukami et al., Dig. Tech. Pap. Symp. VLSI Technol. 2012, 61.
2. I. M. Miron et al., Nature 189, 476 (2011). 10.1038/nature10309
3. S. Fukami et al., Appl. Phys. Lett. 95, 232504 (2009). 10.1063/1.3271827
4. S. Mangin et al., Nature Mater. 5, 210 (2006). 10.1038/nmat1595
5. H. Honjo et al., J. Appl. Phys. 111, 07C903 (2012). 10.1063/1.3671437
6. R. Nebashi et al., in Int. Conf. on Solid State Dev. and Mat. (2013), p. 1102.
7. Y. Tsuji et al., Dig. Tech. Pap. Symp. VLSI Technol. 2012, 63.
8. S. Ikeda et al., Nature Mater. 9, 721 (2010). 10.1038/nmat2804
9. M. Kodozuka et al., J. Appl. Phys. 111, 043913 (2012). 10.1063/1.3688039
10. H. Yamamoto et al., Appl. Phys. Express 5, 053002 (2012). 10.1143/APEX.5.053002
11. S. Ikeda et al., IEEE Trans. Magn. 48, 3829 (2012). 10.1109/TMAG.2012. 2203588
12. J. Sinha et al., Appl. Phys. Lett. 102, 242405 (2013). 10.1063/1.4811269
13. H. Winters et al., J. Vac. Sci. Technol., A 11 (3), 657 (1993). 10.1116/1.578787
14. S. Iwatsubo et al., J. Appl. Phys. 83, 6667 (1998). 10.1063/1.367705
15. K. Kinoshita et al., in Proc. 35th Int. Symp. Dry Process (2012), p. 53.