Distribution of critical current density for magnetic domain wall motion

Journal of Applied Physics

Volumn 115, Issue 17, 2014, Pages

  Fukami, S ^a   Yamanouchi, M ^a   Nakatani, Y ^b   Kim, K J ^c   Koyama, T ^c,d   Chiba, D ^c,d,e   Ikeda, S ^a   Kasai, N ^a   Ono, T ^c   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^c KYOTO UNIVERSITY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

WIRE;

DEVICE SIZES; DISTRIBUTION OF CRITICAL CURRENT DENSITY; DOMINANT FACTOR; MICROMAGNETIC SIMULATIONS; REPEATED MEASUREMENTS; STANDARD DEVIATION; WIRE WIDTH;

MAGNETIC STRUCTURE;

EID: 84903879116     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4866394     Document Type: Conference Paper

References (21)

1. L. Berger, J. Appl. Phys. 55, 1954 (1984). 10.1063/1.333530
2. D. A. Allwood et al., Science 309, 1688 (2005). 10.1126/science.1108813
3. S. S. P. Parkin, M. Hayashi, and L. Thomas, Science 320, 190 (2008). 10.1126/science.1145799
4. S. Fukami et al., Dig. Tech. Pap., Symp. VLSI Technol. 2009, p. 230;
5. S. Fukami et al., Dig. Tech. Pap., Symp. VLSI Technol. 2012, p. 61. 10.1109/VLSIT.2012.6242461
6. H. Ohno et al., Tech. Dig.-Int. Electron Devices Meet. 2010, p. 218. 10.1109/IEDM.2010.5703329
7. S. Fukami, T. Suzuki, N. Ohshima, K. Nagahara, and N. Ishiwata, J. Appl. Phys. 103, 07E718 (2008). 10.1063/1.2830964
8. T. Koyama et al., Nature Mater. 10, 194 (2011). 10.1038/nmat2961
9. K.-J. Kim et al., Nat. Commun. 4, 2011 (2013). 10.1038/ncomms3011
10. S. Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno, Nat. Commun. 4, 2293 (2013). 10.1038/ncomms3293
11. M. J. M. Pelgrom, A. C. J. Duinmaijer, and A. P. G. Welbers, IEEE J. Solid-State Circuits 24, 1433 (1989). 10.1109/JSSC.1989.572629
12. T. Hiramoto et al., IEEE Trans. Electron Devices 58, 2249 (2011). 10.1109/TED.2011.2138142
13. T. Hamamoto, S. Sugiura, and S. Sawada, IEEE Trans. Electron Devices 45, 1300 (1998). 10.1109/16.678551
14. J. L. Cousins and D. E. Kotecki, IEEE Electron Device Lett. 23, 267 (2002). 10.1109/55.998872
15. A. Spessot et al., IEEE Trans. Electron Devices 58, 2302 (2011). 10.1109/TED.2011.2147319
16. G. Tatara and H. Kohno, Phys. Rev. Lett. 92, 086601 (2004). 10.1103/PhysRevLett.92.086601
17. Z. Li and S. Zhang, Phys. Rev. Lett. 92, 207203 (2004). 10.1103/PhysRevLett.92.207203
18. A. Thiaville, Y. Nakatani, J. Miltat, and N. Vernier, J. Appl. Phys. 95, 7049 (2004). 10.1063/1.1667804
19. Y. Nakatani, A. Thiaville, and J. Miltat, Nature Mater. 2, 521 (2003). 10.1038/nmat931
20. Y. Nakatani and N. Hayashi, J. Magn. Soc. Jpn. 25, 252 (2001). 10.3379/jmsjmag.25.252
21. K. Yamada et al., Appl. Phys. Express 4, 113001 (2011). 10.1143/APEX.4.113001