Ultrafast transient terahertz conductivity of monolayer MoS2and WSe2 grown by chemical vapor deposition

ACS Nano

Volumn 8, Issue 11, 2014, Pages 11147-11153

  Docherty, Callum J ^a   Parkinson, Patrick ^a   Joyce, Hannah J ^a   Chiu, Ming Hui ^b   Chen, Chang Hsiao ^c   Lee, Ming Yang ^c   Li, Lain Jong ^b   Herz, Laura M ^a   Johnston, Michael B ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

CVD; Molybdenum disulfide; Photoluminescence; Terahertz conductivity; Transition metal dichalcogenide; Tungsten diselenide; Ultrafast

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SELENIUM COMPOUNDS; SULFUR COMPOUNDS; TERAHERTZ SPECTROSCOPY; TRANSITION METALS;

MOLYBDENUM DISULFIDE; TERA HERTZ; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE; ULTRA-FAST;

TUNGSTEN COMPOUNDS;

EID: 84912522406     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5034746     Document Type: Article

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