Optical characterization of low-temperature-grown GaAs for ultrafast all-optical switching devices

IEEE Journal of Quantum Electronics

Volumn 34, Issue 8, 1998, Pages 1426-1436

  Loka, Hany S ^a,b,d,e,f,g   Benjamin, Seldon D ^b,c,h,i   Smith, Peter W E ^a,b  

^a IEEE   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

^c Corning Inc ^*  (United States)

^d CAIRO UNIVERSITY   (Egypt)

^e CAIRO UNIVERSITY   (Egypt)

^f Automatic Control Department   (Canada)

^g OPTICAL SOCIETY OF AMERICA   (United States)

^h RENSSELAER POLYTECHNIC INSTITUTE   (United States)

ⁱ NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Low temperature grown GaAs; Nonlinear optics; Optical materials; Optical switches; Time resolved measurements

Indexed keywords

ANNEALING; CHARGE CARRIERS; LIGHT ABSORPTION; LOW TEMPERATURE EFFECTS; MULTIPHOTON PROCESSES; NONLINEAR OPTICS; OPTICAL SWITCHES; REFRACTIVE INDEX; SEMICONDUCTOR GROWTH; ULTRAFAST PHENOMENA;

TIME RESOLVED MEASUREMENT; TWO PHOTON ABSORPTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032142140     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.704335     Document Type: Article

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