Method of choice for fabrication of high-quality ZnO-based Schottky diodes

Journal of Applied Physics

Volumn 116, Issue 19, 2014, Pages

  Müller, Stefan ^a   Von Wenckstern, Holger ^a   Schmidt, Florian ^a   Splith, Daniel ^a   Heinhold, Robert ^b   Allen, Martin ^b   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FABRICATION; OXYGEN VACANCIES; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; ZINC OXIDE;

COMPENSATION MECHANISM; COMPREHENSIVE COMPARISONS; EFFECTIVE BARRIER HEIGHTS; HOMOGENEOUS CONTACTS; ORDERS OF MAGNITUDE; RECTIFICATION RATIO; RICHARDSON CONSTANT; THEORETICAL VALUES;

PULSED LASERS;

EID: 84911913868     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4901637     Document Type: Article

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