Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

Physica Status Solidi (B) Basic Research

Volumn 250, Issue 10, 2013, Pages 2091-2101

  Boonchun, Adisak ^a,b   Lambrecht, Walter R L ^c,d  

^a KASETSART UNIVERSITY   (Thailand)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c CASE WESTERN RESERVE UNIVERSITY   (United States)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Nitrogen molecule; Oxygen vacancy; P type doping

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONIC STRUCTURE; II-VI SEMICONDUCTORS; LOCAL DENSITY APPROXIMATION; NITROGEN; OXIDE MINERALS; OXYGEN; PARAMAGNETIC RESONANCE; WAVE FUNCTIONS; ZINC OXIDE;

DONOR-ACCEPTOR-PAIR RECOMBINATION; ELECTRON PARAMAGNETIC RESONANCES (EPR); GENERALIZED GRADIENT APPROXIMATIONS; HYBRID FUNCTIONAL; NITROGEN MOLECULE; NITROGEN-DOPING; P-TYPE DOPING; TRANSITION LEVEL;

OXYGEN VACANCIES;

EID: 84885480270     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201300010     Document Type: Article

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