Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 211, Issue 1, 2014, Pages 40-47

  Splith, Daniel ^a   Müller, Stefan ^a   Schmidt, Florian ^a   Von Wenckstern, Holger ^a   Van Rensburg, Johan Janse ^b   Meyer, Walter E ^b   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

gallium oxide; heteroepitaxy; pulsed laser deposition; Schottky barriers; thin films

Indexed keywords

BARRIER INHOMOGENEITIES; CURRENT TRANSPORT MECHANISM; EFFECTIVE BARRIER HEIGHTS; GALLIUM OXIDES; ORDERS OF MAGNITUDE; PHOTOGRAPHIC IMAGE; RECTIFICATION RATIO; SCHOTTKY BARRIERS;

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; PHOTOGRAPHY; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; THIN FILMS;

GALLIUM;

EID: 84892907940     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201330088     Document Type: Article

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