Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 112, Issue 12, 2012, Pages

  Gür, Emre ^a,b   Tabares, G ^c   Arehart, A ^b   Chauveau, J M ^d,e   Hierro, A ^c   Ringel, S A ^b  

^a ATATÜRK UNIVERSITY   (Turkey)

^b OHIO STATE UNIVERSITY   (United States)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^d CRHEA CNRS   (France)

^e UNIVERSITÉ CÔTE D'AZUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALLOYING; II-VI SEMICONDUCTORS; MAGNESIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXIDE MINERALS; SAPPHIRE; SEMICONDUCTOR ALLOYS; ZINC ALLOYS; ZINC OXIDE;

CONDUCTION BAND EDGE; CONTROL SAMPLES; DEEP LEVEL OPTICAL SPECTROSCOPY; DEEP-LEVEL DEFECTS; PLANE SAPPHIRE; TERNARY MATERIALS; TRAP CONCENTRATION; VALENCE BAND EDGES;

VANADIUM ALLOYS;

EID: 84881133059     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769874     Document Type: Article

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