SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 5, Issue 20, 2013, Pages 9666-9670

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

(8) Song, H S a,b Li, S L b Gao, L a Xu, Y b Ueno, K c Tang, J a Cheng, Y B a,d Tsukagoshi, K b

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c SAITAMA UNIVERSITY (Japan)

d MONASH UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BOOLEAN LOGIC GATES; FIELD EFFECT TRANSISTOR (FETS); LAYERED SEMICONDUCTORS; METAL CHALCOGENIDE; MOLYBDENUM DISULFIDE; TIN DISULFIDES; ULTRA-THIN CHANNELS; WIDE SPECTRUM;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; LOGIC GATES; MECHANICAL PROPERTIES;

MONOLAYERS;

EID: 84884862198 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr01899g Document Type: Article

Times cited : (291)

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