Silicon photodiodes with high photoconductive gain at room temperature

Optics Express

Volumn 20, Issue 5, 2012, Pages 5518-5523

  Li, X ^a   Carey, J E ^a   Sickler, J W ^a   Pralle, M U ^a   Palsule, C ^a   Vineis, C J ^a  

^a SiOnyx Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOCONDUCTIVITY;

COMPATIBLE PROCESS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DETECTION SENSITIVITY; DETECTIVITY; LOW BIAS; PHOTOCONDUCTIVE GAINS; RESPONSIVITY; REVERSE BIAS; ROOM TEMPERATURE; SILICON PHOTODIODE;

PHOTODIODES;

SILICON;

AMPLIFIER; ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; PHOTOMETRY; SEMICONDUCTOR; TEMPERATURE;

AMPLIFIERS, ELECTRONIC; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; PHOTOMETRY; SEMICONDUCTORS; SILICON; TEMPERATURE;

EID: 84857547276     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.005518     Document Type: Article

References (14)

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