Field effect transistors with layered two-dimensional SnS 2-xSex conduction channels: Effects of selenium substitution

Applied Physics Letters

Volumn 103, Issue 9, 2013, Pages

  Pan, T S ^a,b   De, D ^a   Manongdo, J ^a,c   Guloy, A M ^a   Hadjiev, V G ^d   Lin, Y ^b   Peng, H B ^a  

^a University of Houston   (United States)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c University of the Philippines Diliman   (Philippines)

^d University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP REDUCTION; CONDUCTION CHANNEL; DRAIN-SOURCE CURRENTS; GATE VOLTAGES; MAIN EFFECT; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; FIELD EFFECT TRANSISTORS;

SELENIUM;

EID: 84884178896     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4819072     Document Type: Article

References (27)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature 438, 197 (2005). 10.1038/nature04233
3. A. K. Geim and K. S. Novoselov, Nature Mater. 6, 183 (2007). 10.1038/nmat1849
4. A. H. C. Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009). 10.1103/RevModPhys.81.109
5. C. Soldano, A. Mahmood, and E. Dujardin, Carbon 48, 2127 (2010). 10.1016/j.carbon.2010.01.058
6. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, Proc. Natl. Acad. Sci. U.S.A. 102, 10451 (2005). 10.1073/pnas.0502848102
7. A. Ayari, E. Cobas, O. Ogundadegbe, and M. S. Fuhrer, J. Appl. Phys. 101, 014507 (2007). 10.1063/1.2407388
8. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012). 10.1038/nnano.2012.193
9. S. Balendhran, J. Deng, J. Z. Ou, S. Walia, J. Scott, J. Tang, K. L. Wang, M. R. Field, S. Russo, S. Zhuiykov, M. S. Strano, N. Medhekar, S. Sriram, M. Bhaskaran, and K. Kalantar-zadeh, Adv. Mater. 25, 109 (2013). 10.1002/adma.201203346
10. D. B. Mitzi, L. L. Kosbar, C. E. Murray, M. Copel, and A. Afzali, Nature 428, 299 (2004). 10.1038/nature02389
11. H. T. Yuan, M. Toh, K. Morimoto, W. Tan, F. Wei, H. Shimotani, C. Kloc, and Y. Iwasa, Appl. Phys. Lett. 98, 012102 (2011). 10.1063/1.3535613
12. T. Kyratsi, K. Chrissafis, J. Wachter, K. M. Paraskevopoulos, and M. G. Kanatzidis, Adv. Mater. 15, 1428 (2003). 10.1002/adma.200304994
13. S.-G. Hur, E.-T. Kim, J.-H. Lee, G.-H. Kim, and S.-G. Yoon, J. Vac. Sci. Technol. B 26, 1334 (2008). 10.1116/1.2945301
14. B. Li, J. Liu, G. Xu, R. Lu, L. Feng, and J. Wu, Appl. Phys. Lett. 101, 153903 (2012). 10.1063/1.4759116
15. D. De, J. Manongdo, S. See, V. Zhang, A. Guloy, and H. Peng, Nanotechnology 24, 025202 (2013). 10.1088/0957-4484/24/2/025202
16. International Technology Roadmap for Semiconductors (ITRS), Emerging Research Devices (ERD), 2011 edition, 2012.
17. C. Julien, M. Eddrief, I. Samaras, and M. Balkanski, Mater. Sci. Eng., B 15, 70 (1992). 10.1016/0921-5107(92)90033-6
18. G. Perluzzo, S. Jandl, M. Aubin, and P. E. Girard, Solid State Commun. 27, 1437 (1978). 10.1016/0038-1098(78)91590-9
19. R. H. Williams, R. B. Murray, D. W. Govan, J. M. Thomas, and E. L. Evans, J. Phys. C 6, 3631 (1973). 10.1088/0022-3719/6/24/022
20. F. A. S. Al-Alamy and A. A. Balchin, J. Cryst. Growth 38, 221 (1977). 10.1016/0022-0248(77)90301-3
21. J. R. Guenter and H. R. Oswald, Naturwiss. 55, 177 (1968). 10.1007/BF00591015
22. B. Palosz and E. Salje, J. Appl. Crystallogr. 22, 622 (1989). 10.1107/S0021889889006916
23. C. Kittel, Introduction of Solid State Physics, 4th ed. (John Wiley Sons, New York, 1986), p. 206.
24. P. A. Lee and G. Said, J. Phys. D: Appl. Phys. 1, 837 (1968). 10.1088/0022-3727/1/7/303
25. Landolt-Börnstein-Group III, Condensed Matter (Springer, 1998), Vol. 41C, pp. 1-6.
26. G. Paolo, B. Stefano, B. Nicola, C. Matteo, C. Roberto, C. Carlo, C. Davide, L. C. Guido, C. Matteo, D. Ismaila, C. Andrea Dal, G. Stefano de, F. Stefano, F. Guido, G. Ralph, G. Uwe, G. Christos, K. Anton, L. Michele, M.-S. Layla, M. Nicola, M. Francesco, M. Riccardo, P. Stefano, P. Alfredo, P. Lorenzo, S. Carlo, S. Sandro, S. Gabriele, P. S. Ari, S. Alexander, U. Paolo, and M. W. Renata, J. Phys. Condens. Matter 21, 395502 (2009). 10.1088/0953-8984/21/39/ 395502
27. V. G. Hadjiev, D. De, H. B. Peng, J. Monongdo, and A. M. Guloy, Phys. Rev. B 87, 104302 (2013). 10.1103/PhysRevB.87.104302