Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10471-10479

  Rahimi, Somayyeh ^a   Tao, Li ^a   Chowdhury, Sk Fahad ^a   Park, Saungeun ^a   Jouvray, Alex ^b   Buttress, Simon ^b   Rupesinghe, Nalin ^b   Teo, Ken ^b   Akinwande, Deji ^a  

^a The University of Texas at Austin   (United States)

^b AIXTRON Nanoinstruments Ltd   (United Kingdom)

Author keywords

analog applications; CVD; device performance statistics; field effect transistors; mobility; polycrystalline graphene; wafer scale integration

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GRAPHENE; HIGH FREQUENCY AMPLIFIERS; MECHANICAL ACTUATORS; SILICON WAFERS; WSI CIRCUITS;

ANALOG APPLICATIONS; CHEMICAL VAPOR DEPOSITED; CHEMICAL VAPOR DEPOSITIONS (CVD); DEVICE PERFORMANCE; GRAPHENE FIELD-EFFECT TRANSISTORS; POLYCRYSTALLINE GRAPHENE; RADIO FREQUENCY TRANSISTORS; VERY LARGE SCALE INTEGRATED;

GRAPHENE TRANSISTORS;

EID: 84908429259     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5038493     Document Type: Article

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