High-performance current saturating graphene field-effect transistor with hexagonal boron nitride dielectric on flexible polymeric substrates

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 172-174

  Lee, Jongho ^a   Ha, Tae Jun ^a   Parrish, Kristen N ^a   Chowdhury, Sk Fahad ^a   Tao, Li ^a   Dodabalapur, Ananth ^a   Akinwande, Deji ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Chemical vapor deposition (CVD) graphene; flexible nanoelectronics; hexagonal boron nitride (h BN); RF and analog device

Indexed keywords

ANALOG DEVICES; CONVERSION GAIN; CURRENT SATURATION; DRIVE CURRENTS; ELECTRICAL PERFORMANCE; FLEXIBLE POLYIMIDE; FLEXIBLE POLYMERIC SUBSTRATES; FLEXIBLE SUBSTRATE; GRAPHENE TRANSISTORS; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); HIGH SPECTRAL PURITY; HOLE TRANSPORTS; INSULATING SURFACES; OUTPUT POWER; PLASTIC SUBSTRATES; SUBNANOMETERS; TWO-STEP ANNEALING;

BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATE DIELECTRICS; HIGH ELECTRON MOBILITY TRANSISTORS; POLYIMIDES; POLYMERIC FILMS; SEMICONDUCTING POLYMERS; SUBSTRATES; SURFACE ROUGHNESS;

GRAPHENE;

EID: 84873057863     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2233707     Document Type: Article

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