Double contacts for improved performance of graphene transistors

IEEE Electron Device Letters

Volumn 33, Issue 1, 2012, Pages 17-19

  Franklin, Aaron D ^a   Han, Shu Jen ^a   Bol, Ageeth A ^a   Perebeinos, Vasili ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Contact geometry; contact resistance; double contacts; field effect transistor; graphene

Indexed keywords

BI-LAYER; CONTACT GEOMETRY; FOUR-PROBE; GRAPHENE DEVICES; GRAPHENE TRANSISTORS; SINGLE LAYER; TOP CONTACT;

CHEMICAL VAPOR DEPOSITION; CONTACT RESISTANCE; FIELD EFFECT TRANSISTORS; GEOMETRY;

GRAPHENE;

EID: 84655161227     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2173154     Document Type: Article

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