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Volumn 103, Issue 18, 2013, Pages

Inductively heated synthesized graphene with record transistor mobility on oxidized silicon substrates at room temperature

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; CURRENT SATURATION; GRAPHENE FIELD-EFFECT TRANSISTORS; IMPURITY SCATTERING; OUTPUT CHARACTERISTICS; OXIDIZED SILICON SUBSTRATES; TRANSISTOR MOBILITY; TRANSPORT MECHANISM;

EID: 84889688617     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4828501     Document Type: Article
Times cited : (27)

References (36)
  • 3
    • 77955759220 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.81.195442
    • V. Perebeinos and P. Avouris, Phys. Rev. B 81 (19), 195442 (2010). 10.1103/PhysRevB.81.195442
    • (2010) Phys. Rev. B , vol.81 , Issue.19 , pp. 195442
    • Perebeinos, V.1    Avouris, P.2
  • 18
    • 44449157280 scopus 로고    scopus 로고
    • 10.1088/0953-8984/20/22/225005
    • R. Varns and P. Strange, J. Phys.: Condens. Matter 20 (22), 225005 (2008). 10.1088/0953-8984/20/22/225005
    • (2008) J. Phys.: Condens. Matter , vol.20 , Issue.22 , pp. 225005
    • Varns, R.1    Strange, P.2
  • 33
    • 79951849169 scopus 로고    scopus 로고
    • High-field carrier velocity and current saturation in graphene field-effect transistors
    • B. W. Scott and J. Leburton, "High-field carrier velocity and current saturation in graphene field-effect transistors," 2010 10th IEEE Conference on Nanotechnology, p. 655.
    • 2010 10th IEEE Conference on Nanotechnology , pp. 655
    • Scott, B.W.1    Leburton, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.