Effects of stoichiometry on electrical, optical, and structural properties of indium nitride

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Ho, J C ^a   Specht, P ^b   Yang, Q ^b   Xu, X ^b   Hao, D ^b   Weber, E R ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

FREE-ELECTRON CONCENTRATION; INDIUM NITRIDE; PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY; REDSHIFTS;

CONTAMINATION; ELECTRON ENERGY LEVELS; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

STOICHIOMETRY;

EID: 27844504136     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2130514     Document Type: Article

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