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Volumn 632, Issue , 2015, Pages 98-102

Local atomic configuration of graphene, buffer layer, and precursor layer on SiC(0001) by photoelectron diffraction

(9) Matsui, Hirosuke a Matsui, Fumihiko a Maejima, Naoyuki a Matsushita, Tomohiro b Okamoto, Takeshi c Hattori, Azusa N c Sano, Yasuhisa c Yamauchi, Kazuto c Daimon, Hiroshi a

a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

c OSAKA UNIVERSITY (Japan)

Author keywords

Graphene; Interface structure; Photoelectron diffraction; Photoelectron spectroscopy; Synchrotron radiation

Indexed keywords

ATOMS; DIFFRACTION; GRAPHENE; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SILICON; SILICON CARBIDE; SILICON COMPOUNDS; SYNCHROTRON RADIATION; X RAYS;

ATOMIC CONFIGURATION; CIRCULARLY POLARIZED; DIFFRACTION RINGS; FORWARD-FOCUSING; INELASTIC MEAN FREE PATH; INTERFACE STRUCTURES; PHOTOELECTRON DIFFRACTION; PHOTOELECTRON INTENSITIES;

BUFFER LAYERS;

EID: 84907982239 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2014.09.021 Document Type: Article

Times cited : (9)

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