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Applied Physics Letters

Volumn 105, Issue 14, 2014, Pages

Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10 nm

(8) Fu, Mengqi a Pan, Dong b Yang, Yingjun a Shi, Tuanwei a Zhang, Zhiyong a Zhao, Jianhua b Xu, H Q a Chen, Qing a

a PEKING UNIVERSITY (China)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC;

EID: 84907877601 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4897496 Document Type: Article

Times cited : (30)

References (30)

1
- 3643134132
- C. A. Mead and W. G. Spitzer, Phys. Rev. Lett. 10, 471-472 (1963). 10.1103/PhysRevLett.10.471
- (1963) Phys. Rev. Lett. , vol.10 , pp. 471-472
- Mead, C.A.¹ Spitzer, W.G.²

2
- 84899986783
- S. Johansson, E. Memisevic, L.-E. Wernersson, and E. Lind, IEEE Electron Device Lett. 35, 518-520 (2014). 10.1109/LED.2014.2310119
- (2014) IEEE Electron Device Lett. , vol.35 , pp. 518-520
- Johansson, S.¹ Memisevic, E.² Wernersson, L.-E.³ Lind, E.⁴

3
- 84883271377
- K. M. Persson, M. Berg, M. B. Borg, J. Wu, S. Johansson, J. Svensson, K. Jansson, E. Lind, and L.-E. Wernersson, IEEE Trans. Electron Devices 60, 2761-2767 (2013). 10.1109/TED.2013.2272324
- (2013) IEEE Trans. Electron Devices , vol.60 , pp. 2761-2767
- Persson, K.M.¹ Berg, M.² Borg, M.B.³ Wu, J.⁴ Johansson, S.⁵ Svensson, J.⁶ Jansson, K.⁷ Lind, E.⁸ Wernersson, L.-E.⁹

4
- 75849144727
- S. W. Nam, X. C. Jiang, Q. H. Xiong, D. Ham, and C. M. Lieber, Proc. Natl. Acad. Sci. 106, 21035-21038 (2009). 10.1073/pnas.0911713106
- (2009) Proc. Natl. Acad. Sci. , vol.106 , pp. 21035-21038
- Nam, S.W.¹ Jiang, X.C.² Xiong, Q.H.³ Ham, D.⁴ Lieber, C.M.⁵

5
- 84869202290
- A. W. Dey, J. Svensson, M. Borg, M. Ek, and L.-E. Wernersson, Nano Lett. 12, 5593-5597 (2012). 10.1021/nl302658y
- (2012) Nano Lett. , vol.12 , pp. 5593-5597
- Dey, A.W.¹ Svensson, J.² Borg, M.³ Ek, M.⁴ Wernersson, L.-E.⁵

6
- 84898017227
- M. Borg, H. Schmid, K. E. Moselund, G. Signorello, L. Gignac, J. Bruley, C. Breslin, P. D. Kanungo, P. Werner, and H. Riel, Nano Lett. 14, 1914-1920 (2014). 10.1021/nl404743j
- (2014) Nano Lett. , vol.14 , pp. 1914-1920
- Borg, M.¹ Schmid, H.² Moselund, K.E.³ Signorello, G.⁴ Gignac, L.⁵ Bruley, J.⁶ Breslin, C.⁷ Kanungo, P.D.⁸ Werner, P.⁹ Riel, H.¹⁰

7
- 56549107714
- J. Appenzeller, J. Knoch, M. T. Björk, H. Riel, H. Schmid, and W. Riess, IEEE Trans. Electron Devices 55, 2827-2845 (2008). 10.1109/TED.2008.2008011
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 2827-2845
- Appenzeller, J.¹ Knoch, J.² Björk, M.T.³ Riel, H.⁴ Schmid, H.⁵ Riess, W.⁶

8
- 77949275137
- J.-P. Colinge, C.-W. Lee, A. Afzalian, N. D. Akhavan, R. Yan, I. Ferain, P. Razavi, B. O'Neil, A. Blake, M. White, A.-M. Kelleher, B. McCarthy, and R. Murphy, Nat. Nanotechnol. 5, 225-229 (2010). 10.1038/nnano.2010.15
- (2010) Nat. Nanotechnol. , vol.5 , pp. 225-229
- Colinge, J.-P.¹ Lee, C.-W.² Afzalian, A.³ Akhavan, N.D.⁴ Yan, R.⁵ Ferain, I.⁶ Razavi, P.⁷ O'Neil, B.⁸ Blake, A.⁹ White, M.¹⁰ Kelleher, A.-M.¹¹ McCarthy, B.¹² Murphy, R.¹³

9
- 33749072883
- F. Léonard and A. Talin, Phys. Rev. Lett. 97, 026804 (2006). 10.1103/PhysRevLett.97.026804
- (2006) Phys. Rev. Lett. , vol.97 , pp. 026804
- Léonard, F.¹ Talin, A.²

10
- 59949097581
- E. Lind, M. P. Persson, Y. M. Niquet, and L.-E. Wernersson, IEEE Trans. Electron Devices 56, 201-205 (2009). 10.1109/TED.2008.2010587
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 201-205
- Lind, E.¹ Persson, M.P.² Niquet, Y.M.³ Wernersson, L.-E.⁴

11
- 61649109093
- A. C. Ford, J. C. Ho, Y.-L. Chueh, Y.-C. Tseng, Z. Fan, J. Guo, J. Bokor, and A. Javey, Nano Lett. 9, 360-365 (2009). 10.1021/nl803154m
- (2009) Nano Lett. , vol.9 , pp. 360-365
- Ford, A.C.¹ Ho, J.C.² Chueh, Y.-L.³ Tseng, Y.-C.⁴ Fan, Z.⁵ Guo, J.⁶ Bokor, J.⁷ Javey, A.⁸

12
- 84858205440
- A. C. Ford, S. B. Kumar, R. Kapadia, J. Guo, and A. Javey, Nano Lett. 12, 1340-1343 (2012). 10.1021/nl203895x
- (2012) Nano Lett. , vol.12 , pp. 1340-1343
- Ford, A.C.¹ Kumar, S.B.² Kapadia, R.³ Guo, J.⁴ Javey, A.⁵

13
- 84873663522
- S. Chuang, Q. Gao, R. Kapadia, A. C. Ford, J. Guo, and A. Javey, Nano Lett. 13, 555-558 (2013). 10.1021/nl3040674
- (2013) Nano Lett. , vol.13 , pp. 555-558
- Chuang, S.¹ Gao, Q.² Kapadia, R.³ Ford, A.C.⁴ Guo, J.⁵ Javey, A.⁶

14
- 84903484408
- A. Razavieh, P. K. Mohseni, K. Jung, S. Mehrotra, S. Das, S. Suslov, X. L. Li, G. Klimeck, D. B. Janes, and J. Appenzeller, ACS Nano 8, 6281-6287 (2014). 10.1021/nn5017567
- (2014) ACS Nano , vol.8 , pp. 6281-6287
- Razavieh, A.¹ Mohseni, P.K.² Jung, K.³ Mehrotra, S.⁴ Das, S.⁵ Suslov, S.⁶ Li, X.L.⁷ Klimeck, G.⁸ Janes, D.B.⁹ Appenzeller, J.¹⁰

15
- 84861674649
- A. W. Dey, C. Thelander, K. A. Dick, B. M. Borg, M. Borgström, P. Nilsson, and L.-E. Wernersson, IEEE Electron Device Lett. 33, 791-793 (2012). 10.1109/LED.2012.2190132
- (2012) IEEE Electron Device Lett. , vol.33 , pp. 791-793
- Dey, A.W.¹ Thelander, C.² Dick, K.A.³ Borg, B.M.⁴ Borgström, M.⁵ Nilsson, P.⁶ Wernersson, L.-E.⁷

16
- 84896334118
- D. Pan, M. Q. Fu, X. Z. Yu, X. L. Wang, L. J. Zhu, S. H. Nie, S. L. Wang, Q. Chen, P. Xiong, S. von Molnár, and J. H. Zhao, Nano Lett. 14, 1214-1220 (2014). 10.1021/nl4040847
- (2014) Nano Lett. , vol.14 , pp. 1214-1220
- Pan, D.¹ Fu, M.Q.² Yu, X.Z.³ Wang, X.L.⁴ Zhu, L.J.⁵ Nie, S.H.⁶ Wang, S.L.⁷ Chen, Q.⁸ Xiong, P.⁹ Von Molnár, S.¹⁰ Zhao, J.H.¹¹

17
- 84896293890
- X. Li, X. L. Wei, T. T. Xu, Z. Y. Ning, J. P. Shu, X. Y. Wang, D. Pan, J. H. Zhao, T. Yang, and Q. Chen, Appl. Phys. Lett. 104, 103110 (2014). 10.1063/1.4868133
- (2014) Appl. Phys. Lett. , vol.104 , pp. 103110
- Li, X.¹ Wei, X.L.² Xu, T.T.³ Ning, Z.Y.⁴ Shu, J.P.⁵ Wang, X.Y.⁶ Pan, D.⁷ Zhao, J.H.⁸ Yang, T.⁹ Chen, Q.¹⁰

18
- 77957685529
- R. Timm, A. Fian, M. Hjort, C. Thelander, E. Lind, J. N. Andersen, L.-E. Wernersson, and A. Mikkelsen, Appl. Phys. Lett. 97, 132904 (2010). 10.1063/1.3495776
- (2010) Appl. Phys. Lett. , vol.97 , pp. 132904
- Timm, R.¹ Fian, A.² Hjort, M.³ Thelander, C.⁴ Lind, E.⁵ Andersen, J.N.⁶ Wernersson, L.-E.⁷ Mikkelsen, A.⁸

19
- 56549106697
- C. Thelander, C. Rehnstedt, L. E. Fröberg, E. Lind, T. Mårtensson, P. Caroff, T. Löwgren, B. J. Ohlsson, S. Lehmann, and L.-E. Wernersson, IEEE Trans. Electron Devices 55, 3030-3036 (2008). 10.1109/TED.2008.2005151
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 3030-3036
- Thelander, C.¹ Rehnstedt, C.² Fröberg, L.E.³ Lind, E.⁴ Mårtensson, T.⁵ Caroff, P.⁶ Löwgren, T.⁷ Ohlsson, B.J.⁸ Lehmann, S.⁹ Wernersson, L.-E.¹⁰

20
- 80052801181
- K. Takei, S. Chuang, H. Fang, R. Kapadia, and C.-H. Liu, Appl. Phys. Lett. 99, 103507-103510 (2011). 10.1063/1.3636110
- (2011) Appl. Phys. Lett. , vol.99 , pp. 103507-103510
- Takei, K.¹ Chuang, S.² Fang, H.³ Kapadia, R.⁴ Liu, C.-H.⁵

21
- 78149440901
- H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P. W. Leu, K. Ganapathi, E. Plis, H. S. Kim, S.-Y. Chen, M. Madsen, A. C. Ford, Y.-L. Chueh, S. Krishna, S. Salahuddin, and A. Javey, Nature 468, 286-289 (2010). 10.1038/nature09541
- (2010) Nature , vol.468 , pp. 286-289
- Ko, H.¹ Takei, K.² Kapadia, R.³ Chuang, S.⁴ Fang, H.⁵ Leu, P.W.⁶ Ganapathi, K.⁷ Plis, E.⁸ Kim, H.S.⁹ Chen, S.-Y.¹⁰ Madsen, M.¹¹ Ford, A.C.¹² Chueh, Y.-L.¹³ Krishna, S.¹⁴ Salahuddin, S.¹⁵ Javey, A.¹⁶

22
- 80755142755
- K. Takei, H. Fang, S. B. Kumar, R. Kapadia, Q. Gao, M. Madsen, H. S. Kim, C.-H. Liu, Y.-L. Chueh, E. Plis, S. Krishna, H. A. Bechtel, J. Guo, and A. Javey, Nano Lett. 11, 5008-5012 (2011). 10.1021/nl2030322
- (2011) Nano Lett. , vol.11 , pp. 5008-5012
- Takei, K.¹ Fang, H.² Kumar, S.B.³ Kapadia, R.⁴ Gao, Q.⁵ Madsen, M.⁶ Kim, H.S.⁷ Liu, C.-H.⁸ Chueh, Y.-L.⁹ Plis, E.¹⁰ Krishna, S.¹¹ Bechtel, H.A.¹² Guo, J.¹³ Javey, A.¹⁴

23
- 77956823969
- G. Astromskas, K. Storm, O. Karlström, P. Caroff, M. Borgström, and L.-E. Wernersson, J. Appl. Phys. 108, 054306 (2010). 10.1063/1.3475356
- (2010) J. Appl. Phys. , vol.108 , pp. 054306
- Astromskas, G.¹ Storm, K.² Karlström, O.³ Caroff, P.⁴ Borgström, M.⁵ Wernersson, L.-E.⁶

24
- 33645940928
- Y. Niquet, A. Lherbier, N. H. Quang, M. V. Fernández-Serra, X. Blasé, and C. Delerue, Phys. Rev. B 73, 165319 (2006). 10.1103/PhysRevB.73.165319
- (2006) Phys. Rev. B , vol.73 , pp. 165319
- Niquet, Y.¹ Lherbier, A.² Quang, N.H.³ Fernández-Serra, M.V.⁴ Blasé, X.⁵ Delerue, C.⁶

25
- 54249088917
- F. Wang, H. Yu, S. Jeong, J. M. Pirtryga, A. Hollingsworth, P. C. Gibbons, and W. E. Buhro, ACS Nano 2, 1903-1913 (2008). 10.1021/nn800356z
- (2008) ACS Nano , vol.2 , pp. 1903-1913
- Wang, F.¹ Yu, H.² Jeong, S.³ Pirtryga, J.M.⁴ Hollingsworth, A.⁵ Gibbons, P.C.⁶ Buhro, W.E.⁷

26
- 84867469471
- Y. Zhao, D. Candebat, C. Delker, Y. Zi, D. Janes, J. Appenzeller, and C. Yang, Nano Lett. 12, 5331-5336 (2012). 10.1021/nl302684s
- (2012) Nano Lett. , vol.12 , pp. 5331-5336
- Zhao, Y.¹ Candebat, D.² Delker, C.³ Zi, Y.⁴ Janes, D.⁵ Appenzeller, J.⁶ Yang, C.⁷

27
- 33747839682
- O. Wunnicke, Appl. Phys. Lett. 89, 083102 (2006). 10.1063/1.2337853
- (2006) Appl. Phys. Lett. , vol.89 , pp. 083102
- Wunnicke, O.¹

28
- 73849105548
- M. Scheffler, S. Nadj-Perge, L. P. Kouwenhoven, M. T. Borgström, and E. P. A. M. Bakkers, J. Appl. Phys. 106, 124303 (2009). 10.1063/1.3270259
- (2009) J. Appl. Phys. , vol.106 , pp. 124303
- Scheffler, M.¹ Nadj-Perge, S.² Kouwenhoven, L.P.³ Borgström, M.T.⁴ Bakkers, E.P.A.M.⁵

29
- 84883194537
- F. Wang, S. Yip, N. Han, K. Fok, H. Lin, J. J. Hou, S. Dong, T. Hung, K. S. Chan, and J. C. Ho, Nanotechnology 24, 375202 (2013). 10.1088/0957-4484/24/37/375202
- (2013) Nanotechnology , vol.24 , pp. 375202
- Wang, F.¹ Yip, S.² Han, N.³ Fok, K.⁴ Lin, H.⁵ Hou, J.J.⁶ Dong, S.⁷ Hung, T.⁸ Chan, K.S.⁹ Ho, J.C.¹⁰

30
- 0035421931
- C. Affentauschegg and H. H. Wieder, Semicond. Sci. Technol. 16, 708-714 (2001). 10.1088/0268-1242/16/8/313
- (2001) Semicond. Sci. Technol. , vol.16 , pp. 708-714
- Affentauschegg, C.¹ Wieder, H.H.²

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