Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates

IEEE Transactions on Electron Devices

Volumn 60, Issue 9, 2013, Pages 2761-2767

  Persson, Karl Magnus ^a   Berg, Martin ^a   Borg, Mattias B ^a   Wu, Jun ^a   Johansson, Sofia ^a   Svensson, Johannes ^a   Jansson, Kristofer ^a   Lind, Erik ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

InAs; MOSFET; Nanowire (NW); RF

Indexed keywords

HIGH DRIVE CURRENT; INAS; INTRINSIC PERFORMANCE; MOS-FET; PERFORMANCE DEGRADATION; RF; RF CHARACTERIZATION; SERIES RESISTANCES;

DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; HAFNIUM OXIDES; NANOWIRES; SEMICONDUCTOR JUNCTIONS; SILICON; TRANSPORT PROPERTIES;

MOSFET DEVICES;

EID: 84883271377     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2272324     Document Type: Article

References (24)

1. C. P. Auth and J. D. Plummer, "Scaling theory for cylindrical, fullydepleted, surrounding-gate MOS-FET's," IEEE Electron Device Lett., vol. 18, no. 2, pp. 74-76, Feb. 1997. (Pubitemid 127566409)
2. D.-H. Kim, J. A. del Alamo, D. A. Antoniadis, and B. Brar, "Extraction of virtual-source injection velocity in sub-100 nm III-V HFETs," in Proc. IEEE IEDM, Dec. 2009, pp. 35.4.1-35.4.4.
3. A. M. Crook, E. Lind, Z. Griffith, M. J. W. Rodwell, J. D. Zimmerman, A. C. Gossard, and S. R. Bank, "Low resistance, nonalloyed Ohmic contacts to InGaAs," Appl. Phys. Lett., vol. 91, no. 19, pp. 192114-1-192114-3, Nov. 2007.
4. A. Dey, C. Thelander, E. Lind, K. D. Thelander, M. Borg, M. Borgström, P. Nilsson, and L.-E. Wernersson, "High-performance InAs nanowire MOSFETs," IEEE Electron Device Lett., vol. 33, no. 6, pp. 791-793, Jun. 2012.
5. S. Johansson, M. Egard, S. Gorji Ghalamestani, B. Mattias Borg, M. Berg, L.-E.Wernersson, and E. Lind, "RF characterization of vertical InAs nanowire wrap-gate transistors integrated on Si substrates," IEEE Trans. Microw. Theory Tech., vol. 59, no. 10, pp. 2733-2738, Oct. 2011.
6. W. Prost and F. J. Tegude, "Fabrication and RF performance of InAs nanowire FET," in Proc. DRC, Jun. 2010, pp. 279-282.
7. T. Takahashi, K. Takei, E. Adabi, Z. Fan, A. M. Niknejad, and A. Javey, "Parallel array InAs nanowire transistors for mechanically bendable ultrahigh frequency electronics," ACS Nano, vol. 4, no. 10, pp. 5855-5860, Sep. 2010.
8. K.-M. Persson, M. Berg, M. Borg, J. Wu, H. Sjoland, E. Lind, and L.-E. Wernersson, "Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/μm and gm = 1.19 mS/μm at VDS = 0.5 V," in Proc. IEEE DRC, Jun. 2012, pp. 195-196.
9. G. Astromskas, K. Storm, O. Karlström, P. Caroff, M. Borgström, and L.-E. Wernersson, "Doping incorporation in InAs nanowires characterized by capacitance measurements," J. Appl. Phys., vol. 108, no. 6, pp. 054306-1-054306-5, Sep. 2010.
10. K. Jansson, E. Lind, and L.-E. Wernersson, "Performance evaluation of III-V nanowire transistors," IEEE Trans. Electron Devices, vol. 59, no. 9, pp. 2375-2382, Sep. 2012.
11. J. Wu, E. Lind, R. Timm, M. Hjort, A. Mikkelsen, and L. E. Wernersson, "Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates," Appl. Phys. Lett., vol. 100, no. 13, pp. 132905-1-132905-3, Mar. 2012.
12. K.-M. Persson, E. Lind, A. Dey, C. Thelander, H. Sjöland, and L. E. Wernersson, "Low-frequency noise in vertical InAs nanowire FETs," IEEE Electron Dev. Lett., vol. 31, no. 5, pp. 428-430, May 2010.
13. E. Lind, M. P. Persson, Y.-M. Niquet, and L.-E. Wernersson, "Band structure effects on the scaling properties of [111] InAs nanowire MOSFETs," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 201-205, Feb. 2009.
14. K. Takei, S. Chuang, H. Fang, R. Kapadia, C.-H. Liu, J. Nah, H. S. Kim, E. Plis, S. Krishna, Y.-L. Chueh, and A. Javey, "Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness," Appl. Phys. Lett., vol. 99, no. 10, pp. 103507-1-103507-5, Sep. 2011.
15. X. Jiang, Q. Xiong, S. Nam, F. Qian, Y. Li, and C. M. Lieber, "InAs/InP radial nanowire heterostructures as high electron mobility devices," Nano Lett., vol. 7, no. 10, pp. 3214-3218, Sep. 2007. (Pubitemid 350132956)
16. J. J. Gu, X. W. Wang, H. Wu, J. Shao, A. T. Neal, M. J. Manfra, R. G. Gordon, and P. D. Ye, "20-80 nm channel length gate-all-around nanowire MOSFETs with EOT=1.2nm and Lowest SS = 63mV/dec," in Proc. IEEE IEDM, Dec. 2012, pp. 630-633.
17. 2008. International Technology Roadmap for Semiconductors [Online]. Available: http://public.itrs.net
18. A. Khakifirooz, O. M. Nayfeh, and D. Antoniadis, "A simple semiempirical short-channel MOSFET current-voltage model continuous across all regions of operation and employing only physical parameters," IEEE Trans. Electron Devices, vol. 56, no. 8, pp. 1674-1680, Aug. 2009.
19. L. Wei, O. Mysore, and D. Antoniadis, "Virtual-source-based selfconsistent current and charge FET models: From ballistic to driftdiffusion velocity-saturation operation," IEEE Trans. Electron Devices, vol. 59, no. 5, pp. 1263-1271, May 2012.
20. C. Thelander, K. A. Dick, M. T. Borgström, L. E. Fröberg, P. Caroff, H. A. Nilsson, and L. Samuelson, "The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors," Nanotechnolgy, vol. 21, no. 20, pp. 1-9, Apr. 2010.
21. S. Y. Chou and D. A. Antoniadis, "Relationship between measured and intrinsic transconductances of FET's," IEEE Trans. Electron Devices, vol. 34, no. 2, pp. 448-450, Feb. 1987. (Pubitemid 17549411)
22. S. Johansson, M. Berg, K.-M. Persson, and E. Lind, "A high-frequency transconductance method for characterization of High-κ border traps in III-V MOSFETs," IEEE Trans. Electron Devices, vol. 60, no. 2, pp. 776-781, Feb. 2013.
23. M. Egard, L. Ohlsson, M. Arlelid, and K.-M. Persson, "High-frequency performance of self-aligned gate-last surface channel In0.53Ga0.47As MOSFET," IEEE Electron Device Lett., vol. 33, no. 3, pp. 369-371, Mar. 2012.
24. L. E. Froberg, C. Rehnstedt, C. Thelander, E. Lind, L.-E. Wernersson, and L. Samuelson, "Heterostructure barriers in wrap gated nanowire FETs," IEEE Electron Device Lett., vol. 29, no. 9, pp. 981-983, Sep. 2008.