The scaling of the effective band gaps in indium-arsenide quantum dots and wires

ACS Nano

Volumn 2, Issue 9, 2008, Pages 1903-1913

  Wang, Fudong ^a   Yu, Heng ^a,d   Jeong, Sohee ^b,c   Pietryga, Jeffrey M ^b   Hollingsworth, Jennifer A ^b   Gibbons, Patrick C ^a   Buhro, William E ^a  

^a WASHINGTON UNIVERSITY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c Korea Institute of Machine and Materials   (South Korea)

^d MagArray Inc   (United States)

Author keywords

Effective band gap; InAs quantum wire; Photoluminescence; Quantum confinement nonparabolicity; Solution liquid solid; Valence band conduction band coupling

Indexed keywords

ARSENIC COMPOUNDS; ENERGY GAP; FORECASTING; GALLIUM ALLOYS; HEAT CONDUCTION; INDIUM ARSENIDE; INDIUM COMPOUNDS; LIGHT EMISSION; LUMINESCENCE; NANOSTRUCTURES; NANOWIRES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SOLID SOLUTIONS; WIRE;

BAND NONPARABOLICITY; CONFINEMENT MODELS; DIAMETER DISTRIBUTIONS; EFFECTIVE BAND GAP; EFFECTIVE BAND GAPS; INAS QUANTUM DOTS; INAS QUANTUM WIRE; PHOTOLUMINESCENCE SPECTRUM; QUANTUM DOTS; QUANTUM WIRES; SCALING; THEORETICAL MODELS; VALENCE-BAND - CONDUCTION-BAND COUPLING;

SEMICONDUCTOR QUANTUM DOTS;

INDIUM; INDIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; QUANTUM DOTS; SURFACE PROPERTIES;

EID: 54249088917     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn800356z     Document Type: Article

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