Reduction of native oxides on InAs by atomic layer deposited Al 2O3 and HfO2

Applied Physics Letters

Volumn 97, Issue 13, 2010, Pages

  Timm, R ^a   Fian, A ^a,b   Hjort, M ^a   Thelander, C ^a   Lind, E ^a   Andersen, J N ^a   Wernersson, L E ^a   Mikkelsen, A ^a  

^a LUND UNIVERSITY   (Sweden)

^b JOANNEUM RESEARCH   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; DEPOSITION TEMPERATURES; HIGH-SPEED; INAS; METAL OXIDE SEMICONDUCTOR; NATIVE OXIDES; OXIDATION STATE; OXIDE REDUCTION; SYNCHROTRON X RAYS;

ATOMIC LAYER DEPOSITION; EMISSION SPECTROSCOPY; HAFNIUM COMPOUNDS; INDIUM ARSENIDE; LEAD OXIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

OXIDE FILMS;

EID: 77957685529     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3495776     Document Type: Article

References (21)

1. M. Houssa, E. Chagarov, and A. Kummel, MRS Bull. MRSBEA 0883-7694 34, 504 (2009).
2. G. K. Dalapati, Y. Tong, W. -Y. Loh, H. K. Mun, and B. J. Cho, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 1831 (2007). 10.1109/TED.2007. 901261 (Pubitemid 47260257)
3. H. Hasegawa and M. Akazawa, Appl. Surf. Sci. ASUSEE 0169-4332 254, 8005 (2008). 10.1016/j.apsusc.2008.03.051
4. E. J. Kim, L. Wang, P. M. Asbeck, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett. APPLAB 0003-6951 96, 012906 (2010). 10.1063/1.3281027
5. R. M. Wallace, P. C. McIntyre, J. Kim, and Y. Nishi, MRS Bull. MRSBEA 0883-7694 34, 493 (2009).
6. C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 94, 162101 (2009). 10.1063/1.3120546
7. H. D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, T. Gustafsson, and E. Garfunkel, Appl. Phys. Lett. APPLAB 0003-6951 94, 222108 (2009). 10.1063/1.3148723
8. M. Kobayashi, P. T. Chen, Y. Sun, N. Goel, P. Majhi, M. Garner, W. Tsai, P. Pianetta, and Y. Nishi, Appl. Phys. Lett. APPLAB 0003-6951 93, 182103 (2008). 10.1063/1.3020298
9. M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 93, 202902 (2008). 10.1063/1.3033404
10. Silicon (Si), Electron Mobility; Gallium Arsenide (GaAs), Electron Mobility; Indium Arsenide (InAs), Carrier Mobilities, Landolt-Börnstein, New Series, Group III, edited by, O. Madelung, U. Rössler, and, M. Schulz, (Springer, New York, 2002).
11. D. Wheeler, L. -E. Wernersson, L. Fröberg, C. Thelander, A. Mikkelsen, K. -J. Weststrate, A. Sonnet, E. M. Vogel, and A. Seabaugh, Microelectron. Eng. MIENEF 0167-9317 86, 1561 (2009). 10.1016/j.mee.2009.03.091
12. E. Lind, Y. -M. Niquet, H. Mera, and L. -E. Wernersson, Appl. Phys. Lett. APPLAB 0003-6951 96, 233507 (2010). 10.1063/1.3449559
13. S. Roddaro, K. Nilsson, G. Astromskas, L. Samuelson, L. -E. Wernersson, O. Karlström, and A. Wacker, Appl. Phys. Lett. APPLAB 0003-6951 92, 253509 (2008). 10.1063/1.2949080
14. A. P. Kirk, M. Milojevic, J. Kim, and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 96, 202905 (2010). 10.1063/1.3432749
15. See detailed description at http://www.maxlab.lu.se/beamlines/bli311/.
16. D. M. Poirier and J. H. Weaver, Surf. Sci. Spectra SSSPEN 1055-5269 2, 224 (1993). 10.1116/1.1247703
17. L. O. Olsson, L. Ilver, J. Kanski, P. O. Nilsson, C. B. M. Andersson, U. O. Karlsson, and M. C. Hkansson, Phys. Rev. B PLRBAQ 0556-2805 53, 4734 (1996). 10.1103/PhysRevB.53.4734
18. G. Hollinger, R. Skheyta-Kabbani, and M. Gendry, Phys. Rev. B PLRBAQ 0556-2805 49, 11159 (1994). 10.1103/PhysRevB.49.11159
19. D. Y. Petrovykh, M. J. Yang, and L. J. Whitman, Surf. Sci. SUSCAS 0039-6028 523, 231 (2003). 10.1016/S0039-6028(02)02411-1
20. G. P. Schwartz, J. E. Griffiths, and G. J. Gualtieri, Thin Solid Films THSFAP 0040-6090 94, 213 (1982). 10.1016/0040-6090(82)90298-X
21. J. A. Taylor, J. Vac. Sci. Technol. JVSTAL 0022-5355 20, 751 (1982). 10.1116/1.571450