Effect of diameter variation on electrical characteristics of schottky barrier indium arsenide nanowire field-effect transistors

ACS Nano

Volumn 8, Issue 6, 2014, Pages 6281-6287

  Razavieh, Ali ^a   Mohseni, Parsian Katal ^b   Jung, Kyooho ^b   Mehrotra, Saumitra ^a   Das, Saptarshi ^a   Suslov, Sergey ^a   Li, Xiuling ^b   Klimeck, Gerhard ^a   Janes, David B ^a   Appenzeller, Joerg ^a  

^a Purdue University   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

InAs; MOSFET; nanowire; narrow band gap; Schottky barrier; Tersoff's theory

Indexed keywords

ENERGY GAP; INDIUM ARSENIDE; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; THERMIONIC EMISSION;

INAS; MOS-FET; NARROW BAND GAP; SCHOTTKY BARRIERS; TERSOFF'S THEORY;

NANOWIRES;

EID: 84903484408     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5017567     Document Type: Article

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