A radiation hardened hybrid spintronic/CMOS nonvolatile unit using magnetic tunnel junctions

Journal of Physics D: Applied Physics

Volumn 47, Issue 40, 2014, Pages

  Kang, Wang ^a,b   Zhao, Weisheng ^a,b   Deng, Erya ^b   Klein, Jacques Olivier ^b   Cheng, Yuanqing ^a   Ravelosona, Dafiné ^b   Zhang, Youguang ^a   Chappert, Claude ^b  

^a BEIHANG UNIVERSITY   (China)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

hybrid spintronic CMOS circuit; magnetic tunnel junction; nonvolatile; radiation effect

Indexed keywords

MAGNETIC TUNNEL JUNCTION; NON-VOLATILE; RADIATION-HARDENED;

RADIATION EFFECTS;

EID: 84907009414     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/40/405003     Document Type: Article

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