|
Volumn 41, Issue 1 I, 2005, Pages 132-136
|
A 4-Mb toggle MRAM based on a novel bit and switching method
|
Author keywords
Magnetic film memories; Magnetic tunnel junction; Magnetoresistive device; Magnetoresistive random access memory (MRAM); Micromagnetic switching; MRAM integration; Random access memories (RAMs)
|
Indexed keywords
ANTIFERROMAGNETISM;
CMOS INTEGRATED CIRCUITS;
DATA STORAGE EQUIPMENT;
ELECTRODES;
MAGNETIC DEVICES;
MAGNETIC FILMS;
SEMICONDUCTOR MATERIALS;
SWITCHING;
TUNNEL JUNCTIONS;
MAGNETIC FILM MEMORIES;
MAGNETIC TUNNEL JUNCTION;
MAGNETORESISTIVE DEVICES;
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM);
MICROMAGNETIC SWITCHING;
MRAM INTEGRATION;
RANDOM ACCESS STORAGE;
|
EID: 19944431328
PISSN: 00189464
EISSN: None
Source Type: Journal
DOI: 10.1109/TMAG.2004.840847 Document Type: Article |
Times cited : (440)
|
References (4)
|