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Volumn 41, Issue 1 I, 2005, Pages 132-136

A 4-Mb toggle MRAM based on a novel bit and switching method

Author keywords

Magnetic film memories; Magnetic tunnel junction; Magnetoresistive device; Magnetoresistive random access memory (MRAM); Micromagnetic switching; MRAM integration; Random access memories (RAMs)

Indexed keywords

ANTIFERROMAGNETISM; CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; ELECTRODES; MAGNETIC DEVICES; MAGNETIC FILMS; SEMICONDUCTOR MATERIALS; SWITCHING; TUNNEL JUNCTIONS;

EID: 19944431328     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.840847     Document Type: Article
Times cited : (440)

References (4)
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    • (2002) 2002 IEEE Symp. VLSI Circuits , pp. 158-161
    • Durlam, M.1
  • 2
    • 20844455024 scopus 로고    scopus 로고
    • Magnetoresistive random access memory using magnetic tunnel junctions
    • May
    • S. Tehrani et al, "Magnetoresistive random access memory using magnetic tunnel junctions," Proc. IEEE, vol. 91, no. 5, pp. 703-714, May 2003.
    • (2003) Proc. IEEE , vol.91 , Issue.5 , pp. 703-714
    • Tehrani, S.1
  • 3
    • 12344263192 scopus 로고    scopus 로고
    • "Method of Writing to Scalable Magnetoresistance Random Access Memory Element," U.S. Patent 6 545 906 B 1, Apr. 8
    • L. Savtchenko et al, "Method of Writing to Scalable Magnetoresistance Random Access Memory Element," U.S. Patent 6 545 906 B 1, Apr. 8, 2003.
    • (2003)
    • Savtchenko, L.1
  • 4
    • 0001594255 scopus 로고    scopus 로고
    • Spin valve and dual spin valve heads with synthetic antiferromagnets
    • Mar.
    • J. Zhu, "Spin valve and dual spin valve heads with synthetic antiferromagnets," IEEE Trans. Magn., vol. 35, no. 2, pp. 655-660, Mar. 1999.
    • (1999) IEEE Trans. Magn. , vol.35 , Issue.2 , pp. 655-660
    • Zhu, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.