A 4-Mb toggle MRAM based on a novel bit and switching method

IEEE Transactions on Magnetics

Volumn 41, Issue 1 I, 2005, Pages 132-136

  Engel, B N ^a   Akerman, J ^a   Butcher, B ^a   Dave, R W ^a   DeHerrera, M ^a   Durlam, M ^a   Grynkewich, G ^a   Janesky, J ^a   Pietambaram, S V ^a   Rizzo, N D ^a   Slaughter, J M ^a   Smith, K ^a   Sun, J J ^a   Tehran, S ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Magnetic film memories; Magnetic tunnel junction; Magnetoresistive device; Magnetoresistive random access memory (MRAM); Micromagnetic switching; MRAM integration; Random access memories (RAMs)

Indexed keywords

ANTIFERROMAGNETISM; CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; ELECTRODES; MAGNETIC DEVICES; MAGNETIC FILMS; SEMICONDUCTOR MATERIALS; SWITCHING; TUNNEL JUNCTIONS;

MAGNETIC FILM MEMORIES; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE DEVICES; MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); MICROMAGNETIC SWITCHING; MRAM INTEGRATION;

RANDOM ACCESS STORAGE;

EID: 19944431328     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.840847     Document Type: Article

References (4)

1. M. Durlam et al, "A 0.18μm 4Mb toggling MRAM," in 2002 IEEE Symp. VLSI Circuits, Jun. 2002, pp. 158-161.
2. S. Tehrani et al, "Magnetoresistive random access memory using magnetic tunnel junctions," Proc. IEEE, vol. 91, no. 5, pp. 703-714, May 2003.
3. L. Savtchenko et al, "Method of Writing to Scalable Magnetoresistance Random Access Memory Element," U.S. Patent 6 545 906 B 1, Apr. 8, 2003.
4. J. Zhu, "Spin valve and dual spin valve heads with synthetic antiferromagnets," IEEE Trans. Magn., vol. 35, no. 2, pp. 655-660, Mar. 1999.