Single event latchup (SEL) and total ionizing dose (TID) of a 1 Mbit magnetoresistive random access memory (MRAM)

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2010, Pages 71-74

  Heidecker, Jason ^a   Allen, Gregory ^a   Sheldon, Douglas ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE RANDOM ACCESS MEMORIES; NON-VOLATILE MEMORIES; SINGLE EVENT LATCH-UP; STORAGE ELEMENTS; TOTAL IONIZING DOSE;

IONIZING RADIATION; MAGNETIC STORAGE; NONVOLATILE STORAGE; RADIATION EFFECTS; TUNNEL JUNCTIONS;

RANDOM ACCESS STORAGE;

EID: 78650124892     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2010.5619499     Document Type: Conference Paper

References (4)

1. J. M. Slaughter, E. Y. Chen, R. Whig, B. N. Engel, J. Janesky, and S. Tehrani, "Magnetic Tunnel Junction Materials for Electronic Applications," Member J. Minerals, Metals Materials Soc., Jun. 2000. Electronic supplement.
2. M. Durlam, P. Naji, M. DeHerrera, S. Tehrani , G. Kerszykowski, K. Kyler, "Nonvolatile RAM Based on Magnetic Tunnel Junction Elements", IEEE International Solid-State Circuits Conference, 2000.
3. Everspin Corporation. "MRAM Technical Guide," http://everspin.com/.
4. A. J. Van de Goor, "Testing Semiconductor Memories," Theory and Practice, John Wiley and sons, Chichester, UK, 1991.