Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes

ACS Nano

Volumn 8, Issue 8, 2014, Pages 7890-7895

  Martin, Marie Blandine ^a,d   Dlubak, Bruno ^a,b   Weatherup, Robert S ^b   Yang, Heejun ^a,c   Deranlot, Cyrile ^a,d   Bouzehouane, Karim ^a,d   Petroff, Frédéric ^a,d   Anane, Abdelmadjid ^a,d   Hofmann, Stephan ^b   Robertson, John ^b   Fert, Albert ^a,d   Seneor, Pierre ^a,d  

^a CNRS   (France)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Sungkyunkwan University   (South Korea)

^d UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

atomic layer deposition; dielectrics; graphene; magnetic tunnel junction; spin filter; spintronics

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; ATOMS; COSTS; DIELECTRIC MATERIALS; ELECTRON TRANSPORT PROPERTIES; FILTRATION; GRAPHENE; SPIN POLARIZATION; SPINTRONICS; TUNNEL JUNCTIONS; TUNNELLING MAGNETORESISTANCE;

ATOMIC LAYER DEPOSITED; ELECTRON TRANSPORT; LOW COST FABRICATION; MAGNETIC TUNNEL JUNCTION; RELAXED CONDITIONS; SPIN FILTERS; TUNNEL MAGNETORESISTANCE; TUNNEL RESISTANCE;

MAGNETIC DEVICES;

EID: 84906706952     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5017549     Document Type: Article

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