Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier

Journal of Physics D: Applied Physics

Volumn 40, Issue 21, 2007, Pages

  Yuasa, S ^a   Djayaprawira, D D ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Canon ANELVA Technix Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; GIANT MAGNETORESISTANCE; INSULATING MATERIALS; MAGNETOELECTRONICS; RANDOM ACCESS STORAGE;

FERROMAGNETIC ELECTRODE LAYERS; MAGNETIC TUNNEL JUNCTION (MTJ); TUNNEL BARRIERS; TUNNEL MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 35548980051     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/21/R01     Document Type: Article

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