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Volumn 520, Issue 14, 2012, Pages 4820-4822

Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes

Author keywords

Atomic layer deposition; Chemical vapor deposition; Magnetic tunnel junctions; Thin films; Tunnel magnetoresistance

Indexed keywords

ATOMIC LAYER; CHEMICAL VAPOR; CHEMICAL VAPOR DEPOSITION PROCESS; CORE ELEMENTS; FERROMAGNETIC ELECTRODES; IN-SITU; MAGNETIC TUNNEL JUNCTION; MORPHOLOGICAL CHARACTERIZATION; OXIDE LAYER; SPIN-BASED DEVICES; TUNNEL MAGNETORESISTANCE; TUNNEL MAGNETORESISTANCE EFFECTS; TUNNEL OXIDES; ULTRA-THIN;

EID: 84860278056     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.08.037     Document Type: Conference Paper
Times cited : (18)

References (9)
  • 7
    • 34247852737 scopus 로고    scopus 로고
    • National Institute of Standards and Technology (NIST) and Fachinformationszentrum Karlsruhe (FIZ), Edition 1-2008: 44989 (Co), 631729 (α-Fe), 29081 (CoO), 82237 (Fe3O4), 82137 (α-Fe2O3), and 9863 (MgO)
    • Inorganic Crystal Structure Database, National Institute of Standards and Technology (NIST) and Fachinformationszentrum Karlsruhe (FIZ), Edition 1-2008: 44989 (Co), 631729 (α-Fe), 29081 (CoO), 82237 (Fe3O4), 82137 (α-Fe2O3), and 9863 (MgO).
    • Inorganic Crystal Structure Database


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.