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Volumn 520, Issue 14, 2012, Pages 4820-4822
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Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes
a
LABORATORIO MDM
(Italy)
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Author keywords
Atomic layer deposition; Chemical vapor deposition; Magnetic tunnel junctions; Thin films; Tunnel magnetoresistance
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Indexed keywords
ATOMIC LAYER;
CHEMICAL VAPOR;
CHEMICAL VAPOR DEPOSITION PROCESS;
CORE ELEMENTS;
FERROMAGNETIC ELECTRODES;
IN-SITU;
MAGNETIC TUNNEL JUNCTION;
MORPHOLOGICAL CHARACTERIZATION;
OXIDE LAYER;
SPIN-BASED DEVICES;
TUNNEL MAGNETORESISTANCE;
TUNNEL MAGNETORESISTANCE EFFECTS;
TUNNEL OXIDES;
ULTRA-THIN;
ATOMIC LAYER DEPOSITION;
CHEMICAL VAPOR DEPOSITION;
ELECTRIC RESISTANCE;
FERROMAGNETIC MATERIALS;
FERROMAGNETISM;
MAGNETORESISTANCE;
THIN FILMS;
VAPORS;
MAGNETIC DEVICES;
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EID: 84860278056
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.08.037 Document Type: Conference Paper |
Times cited : (18)
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References (9)
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