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Volumn 102, Issue 20, 2013, Pages

Magnetic tunnel junctions with Al2O3 tunnel barriers prepared by atomic layer deposition

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC ORDERING TEMPERATURES; JUNCTION RESISTANCES; MAGNETIC TUNNEL JUNCTION; METAL INSULATORS; ONSET TEMPERATURE; SRTIO; TUNNEL BARRIER; TUNNELING MAGNETORESISTANCE;

EID: 84878358395     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4807132     Document Type: Article
Times cited : (23)

References (19)
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  • 5
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    • 10.1021/cr900056b
    • S. M. George, Chem. Rev. 110, 111 (2010). 10.1021/cr900056b
    • (2010) Chem. Rev. , vol.110 , pp. 111
    • George, S.M.1
  • 6
    • 21744444606 scopus 로고    scopus 로고
    • 10.1063/1.1940727
    • R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005). 10.1063/1.1940727
    • (2005) J. Appl. Phys. , vol.97 , pp. 121301
    • Puurunen, R.L.1
  • 15
    • 18844383199 scopus 로고    scopus 로고
    • 10.1063/1.1885185
    • D. K. Lee and J. I. Hong, J. Appl. Phys. 97, 093905 (2005). 10.1063/1.1885185
    • (2005) J. Appl. Phys. , vol.97 , pp. 093905
    • Lee, D.K.1    Hong, J.I.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.