Graphene as a tunnel barrier: Graphene-based magnetic tunnel junctions

Nano Letters

Volumn 12, Issue 6, 2012, Pages 3000-3004

  Cobas, Enrique ^a   Friedman, Adam L ^a   Van'T Erve, Olaf M J ^a   Robinson, Jeremy T ^a   Jonker, Berend T ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Graphene; magnetic tunnel junction; magnetoresistance; spintronics; tunnel barrier

Indexed keywords

FULLY SCALABLE; GRAPHENE PLANE; MAGNETIC MEMORIES; MAGNETIC TUNNEL JUNCTION; METALLIC CONDUCTIVITY; NANOSCALE CIRCUITS; NON-VOLATILE; OUT-OF-PLANE; PHOTOLITHOGRAPHIC PROCESS; QUANTUM TUNNELING; REPROGRAMMABLE; SINGLE LAYER; SPIN TRANSPORT BEHAVIOR; SPIN-BASED DEVICES; SPIN-DIFFUSION LENGTH; THIN MATERIALS; TUNNEL BARRIER; TUNNEL TRANSISTORS; TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETIC STORAGE; MAGNETOELECTRONICS; MAGNETORESISTANCE; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; TUNNEL JUNCTIONS;

GRAPHENE;

GRAPHITE;

ARTICLE; CHEMISTRY; ELECTRODE; EQUIPMENT; EQUIPMENT DESIGN; MAGNET; SEMICONDUCTOR;

ELECTRODES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MAGNETS; SEMICONDUCTORS;

EID: 84862272703     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3007616     Document Type: Article

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