ALCVD AlOx barrier layers for magnetic tunnel junction applications

IEEE Transactions on Magnetics

Volumn 38, Issue 5 I, 2002, Pages 2724-2726

  Bubber, R ^a   Mao, M ^a   Schneider, T ^a   Hegde, H ^a   Sin, K ^b   Funada, S ^b   Shi, S ^b  

^a Fremont Application Lab of VII   (United States)

^b WESTERN DIGITAL CORPORATION   (United States)

Author keywords

AlOx; Atomic layer chemical vapor deposition (ALCVD); Decoupling; J V; Magnetic thickness loss; Magnetic tunnel junction (MTJ); Thin films; Tunnel barrier; Tunnel magnetoresistance

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; MAGNETIC THIN FILMS; NICKEL COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

MAGNETIC LAYERS;

GIANT MAGNETORESISTANCE;

EID: 0036761774     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2002.803163     Document Type: Article

References (6)

1. T. Suntola, "Atomic layer epitaxy," Thin Solid Films, vol. 216, p. 84, 1992.
2. x for thin film head gap applications," J. Electrochem. Soc., vol. 148, p. G465, 2001.
3. J.G. Simmons, "Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film," J. Appl. Phys., vol. 34, p. 1793, 1963.
4. H. Lefakis, M. Benaissa, P. Humbert, V.S. Speriosu, J. Werckmann, and B.A. Gurnay, "Structure and magnetism of To/Co/Ta sandwiches," J. Magn. Magn. Mat., vol. 154, p. 17, 1996.
5. C.-Y. Hung, M. Mao, S. Funada, T. Schneider, L. Miloslavsky, M. Miller, and H.-C. Tong, "Magnetic properties of ultra-thin NiFe and CoFe films," J. Appl. Phys., vol. 87, p. 6618, 2000.
6. Z. Zhang, S. Cardoso, P.P. Freitas, X. Batlle, P. Wei, N. Barradas, and J.C. Soares, "40% tunneling magnetoresistance after anneal at 380 °C for tunnel junctions with iron-oxide interface layers," J. Appl. Phys., vol. 89, p. 6665, 2001.