Origin of indirect optical transitions in few-layer MoS2, WS2, and WSe2

Nano Letters

Volumn 13, Issue 11, 2013, Pages 5627-5634

  Zhao, Weijie ^a,b   Ribeiro, R M ^b,c   Toh, Minglin ^a,b   Carvalho, Alexandra ^a,b   Kloc, Christian ^d   Castro Neto, A H ^a,b   Eda, Goki ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b National University of Singapore   (Singapore)

^c UNIVERSITY OF MINHO   (Portugal)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

exciton; indirect band gap; photoluminescence spectroscopy; strain; thermal expansion; Transition metal dichalcogenides

Indexed keywords

ANISOTROPIC THERMAL EXPANSION; CONDUCTION-BAND MINIMUM; DIRECT-GAP SEMICONDUCTOR; INDIRECT BAND GAP; INDIRECT EXCITONS; INDIRECT TRANSITION; TEMPERATURE DEPENDENT; TRANSITION METAL DICHALCOGENIDES;

CONDUCTION BANDS; EXCITONS; PHOTOLUMINESCENCE SPECTROSCOPY; STRAIN; THERMAL EXPANSION;

LANDFORMS;

EID: 84887844004     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl403270k     Document Type: Article

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