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Volumn , Issue , 2010, Pages 72-73

On the 60 mV/dec @300 K limit for MOSFET subthreshold swing

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY-OF-STATES; FUNDAMENTAL LIMITS; MOS-FET; SUBTHRESHOLD SWING;

EID: 77957919194     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2010.5488941     Document Type: Conference Paper
Times cited : (84)

References (10)
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    • SB-IGFET: An insulated-gate field-effect transistor using schottky barrier contacts for source and drain
    • Aug.
    • M. P. Lepselter and S. M. Sze, "SB-IGFET: An Insulated-Gate Field-Effect Transistor Using Schottky Barrier Contacts for Source and Drain", Proc. IEEE, pp. 1400-1402, Aug. 1968.
    • (1968) Proc. IEEE , pp. 1400-1402
    • Lepselter, M.P.1    Sze, S.M.2
  • 7
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    • A novel methodology on tuning work function of metal gate using stacking bi-metal layer
    • I. S. Jeon, J. Lee, P. Zhao, et al, "A Novel Methodology on Tuning Work Function of Metal Gate Using Stacking Bi-metal Layer," IEDM 2004, pp 303.
    • IEDM 2004 , pp. 303
    • Jeon, I.S.1    Lee, J.2    Zhao, P.3
  • 8
    • 33644880788 scopus 로고    scopus 로고
    • Work function tuning of metal nitride electrodes for advanced CMOS devices
    • Ren, C., B. B. Faizhal, D. S. H. Chan, et al. "Work function tuning of metal nitride electrodes for advanced CMOS devices." Thin Solid Films 504(1-2) 174-177 (2006).
    • (2006) Thin Solid Films , vol.504 , Issue.1-2 , pp. 174-177
    • Ren, C.1    Faizhal, B.B.2    Chan, D.S.H.3
  • 9
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    • Effective work function modulation by as implantation in metal gate stacks
    • Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society, May Denver, CO, United States
    • Singanamalla, R., H. Y. Yu, T. Janssens, et al. "Effective work function modulation by as implantation in metal gate stacks." 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society, May 2006, Denver, CO, United States, pp49-60.
    • (2006) 2nd International Symposium on Dielectrics for Nanosystems: Materials Science , pp. 49-60
    • Singanamalla, R.1    Yu, H.Y.2    Janssens, T.3
  • 10
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    • Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs
    • Wang, X. P., M.-F. Li, C. Ren, et al. "Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs." IEEE Electr. Dev. Lett. 27(1) 31-33 (2006).
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    • Wang, X.P.1    Li, M.-F.2    Ren, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.