Statistical fluctuations in HfOx resistive-switching memory: Part II-Random telegraph noise

IEEE Transactions on Electron Devices

Volumn 61, Issue 8, 2014, Pages 2920-2927

  Ambrogio, Stefano ^a   Balatti, Simone ^a   Cubeta, Antonio ^a   Calderoni, Alessandro ^b   Ramaswamy, Nirmal ^b   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

Noise fluctuations; random telegraph noise (RTN); resistive switching random access memory (RRAM)

Indexed keywords

CHEMICAL MODIFICATION; STATISTICAL MECHANICS; SWITCHING;

CONDUCTIVE FILAMENTS; ELECTRICAL MODIFICATION; NOISE FLUCTUATIONS; PHYSICAL INTERPRETATION; RANDOM ACCESS MEMORY; RANDOM TELEGRAPH NOISE; RESISTIVE SWITCHING MEMORY; STATISTICAL FLUCTUATIONS;

RANDOM ACCESS STORAGE;

EID: 84905168577     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2330202     Document Type: Article

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