RTS noise characterization of HfOx RRAM in high resistive state

Solid-State Electronics

Volumn 84, Issue , 2013, Pages 160-166

  Puglisi, Francesco M ^a   Pavan, Paolo ^a   Padovani, Andrea ^a   Larcher, Luca ^a   Bersuker, Gennadi ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b SEMATECH   (United States)

Author keywords

Hidden markov model; Random telegraph noise; Resistive random access memory; Time lag plot; Trap assisted conduction

Indexed keywords

HIDDEN MARKOV MODELS; MARKOV PROCESSES; POWER SPECTRAL DENSITY; RRAM; SPECTRAL DENSITY; TELEGRAPH; TIME SERIES ANALYSIS;

CONDUCTION MECHANISM; HIGH RESISTIVE STATE; POWER SPECTRAL DENSITIES (PSD); RANDOM TELEGRAPH NOISE; RANDOM TELEGRAPH SIGNAL NOISE; RESET VOLTAGE; RESISTIVE RANDOM ACCESS MEMORY; TIME LAG;

RANDOM ACCESS STORAGE;

EID: 84879501489     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.02.023     Document Type: Article

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