SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 9, 2011, Pages

Random telegraph-signal noise in junctionless transistors

(6) Nazarov, A N a Ferain, I b Akhavan, N Dehdashti b Razavi, P b Yu, R b Colinge, J P b

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

b UNIVERSITY COLLEGE CORK (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION LAYERS; DRAIN VOLTAGE; EMISSION TIME; FABRICATION PARAMETERS; MAIN PARAMETERS; MEASUREMENT TECHNIQUES; METAL-OXIDE; MOS-FET; MOSFETS; SIGNAL NOISE;

MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL NOISE MEASUREMENT; TELEGRAPH;

FIELD EFFECT TRANSISTORS;

EID: 79952382469 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3557505 Document Type: Article

Times cited : (40)

References (10)

1
- 59849089910
- 0003-6951, 10.1063/1.3079411
- C. W. Lee, A. Afzalian, N. Dehdashti Akhavan, R. Yan, I. Ferain, and J. P. Colinge, Appl. Phys. Lett. 0003-6951 94, 053511 (2009). 10.1063/1.3079411
- (2009) Appl. Phys. Lett. , vol.94 , pp. 053511
- Lee, C.W.¹ Afzalian, A.² Dehdashti Akhavan, N.³ Yan, R.⁴ Ferain, I.⁵ Colinge, J.P.⁶

2
- 77949275137
- 1748-3387, 10.1038/nnano.2010.15
- J. -P. Colinge, C. -W. Lee, A. Afzalian, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A. -M. Kelleher, B. McCarthy, and R. Murphy, Nat. Nanotechnol. 1748-3387 15, 225 (2010). 10.1038/nnano.2010.15
- (2010) Nat. Nanotechnol. , vol.15 , pp. 225
- Colinge, J.-P.¹ Lee, C.-W.² Afzalian, A.³ Dehdashti Akhavan, N.⁴ Yan, R.⁵ Ferain, I.⁶ Razavi, P.⁷ O'Neill, B.⁸ Blake, A.⁹ White, M.¹⁰ Kelleher, A.-M.¹¹ McCarthy, B.¹² Murphy, R.¹³

3
- 77249173867
- 0003-6951, 10.1063/1.3299014
- J. P. Colinge, C. W. Lee, I. Ferain, N. Dehdashti Akhavan, R. Yan, P. Razavi, R. Yu, A. N. Nazarov, and R. T. Doria, Appl. Phys. Lett. 0003-6951 96, 073510 (2010). 10.1063/1.3299014
- (2010) Appl. Phys. Lett. , vol.96 , pp. 073510
- Colinge, J.P.¹ Lee, C.W.² Ferain, I.³ Dehdashti Akhavan, N.⁴ Yan, R.⁵ Razavi, P.⁶ Yu, R.⁷ Nazarov, A.N.⁸ Doria, R.T.⁹

4
- 67349249423
- 0167-9317, 10.1016/j.mee.2009.03.062
- W. Cheng, A. Teramoto, and T. Ohmi, Microelectron. Eng. 0167-9317 86, 1786 (2009). 10.1016/j.mee.2009.03.062
- (2009) Microelectron. Eng. , vol.86 , pp. 1786
- Cheng, W.¹ Teramoto, A.² Ohmi, T.³

5
- 0025383482
- 0741-3106, 10.1109/55.46938
- K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Electron Device Lett. 0741-3106 11, 90 (1990). 10.1109/55.46938
- (1990) IEEE Electron Device Lett. , vol.11 , pp. 90
- Hung, K.K.¹ Ko, P.K.² Hu, C.³ Cheng, Y.C.⁴

6
- 0031350971
- 0167-9317, 10.1016/S0167-9317(97)00166-4
- G. Ghibaudo, Microelectron. Eng. 0167-9317 39, 31 (1997). 10.1016/S0167-9317(97)00166-4
- (1997) Microelectron. Eng. , vol.39 , pp. 31
- Ghibaudo, G.¹

7
- 0026927101
- 0038-1101, 10.1016/0038-1101(92)90161-5
- O. Roux dit Buisson, G. Ghibaudo, and J. Brini, Solid-State Electron. 0038-1101 35, 1273 (1992). 10.1016/0038-1101(92)90161-5
- (1992) Solid-State Electron. , vol.35 , pp. 1273
- Roux Dit Buisson, O.¹ Ghibaudo, G.² Brini, J.³

8
- 79952410656
- 1938-5862, 10.1149/1.3474137
- R. T. Doria, M. A. Pavanello, C.-W. Lee, I. Ferain, N. Dehdashti-Akhavan, R. Yan, P. Razavi, R. Yu, A. Kranti, and J.-P Colinge, ECS Trans. 1938-5862 31, 13 (2010). 10.1149/1.3474137
- (2010) ECS Trans. , vol.31 , pp. 13
- Doria, R.T.¹ Pavanello, M.A.² Lee - C, W.³ Ferain, I.⁴ Dehdashti-Akhavan, N.⁵ Yan, R.⁶ Razavi, P.⁷ Yu, R.⁸ Kranti, A.⁹ Colinge - J, P.¹⁰

9
- 85126711452
- edited by A. N. Nazarov, J. P. Colinge, F. Balestra, J. P. Raskin, F. Gamiz, and V. S. Lysenko (Springer, Berlin), 10.1007/978-3-642-15868-1-10
- J. P. Colinge, C. W. Lee, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, A. Kranti, and R. Yu, in Semiconductor-on-Insulator Materials for Nanoelectronics Applications, edited by, A. N. Nazarov, J. P. Colinge, F. Balestra, J. P. Raskin, F. Gamiz, and, V. S. Lysenko, (Springer, Berlin, 2011), p. 187. 10.1007/978-3-642-15868-1-10
- (2011) Semiconductor-on-Insulator Materials for Nanoelectronics Applications , pp. 187
- Colinge, J.P.¹ Lee, C.W.² Dehdashti Akhavan, N.³ Yan, R.⁴ Ferain, I.⁵ Razavi, P.⁶ Kranti, A.⁷ Yu, R.⁸

10
- 21544440484
- 0003-6951, 10.1063/1.97000
- M. J. Kirton and M. J. Uren, Appl. Phys. Lett. 0003-6951 48, 1270 (1986). 10.1063/1.97000
- (1986) Appl. Phys. Lett. , vol.48 , pp. 1270
- Kirton, M.J.¹ Uren, M.J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.