Random telegraph noise (RTN) in scaled RRAM devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2013, Pages

  Veksler, D ^a   Bersuker, G ^a   Vandelli, L ^b   Padovani, A ^b   Larcher, L ^b   Muraviev, A ^a   Chakrabarti, B ^c   Vogel, E ^c   Gilmer, D C ^a   Kirsch, P D ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c DMSE   (United States)

Author keywords

high k dielectric; noise; Random Telegraph Noise (RTN); RRAM

Indexed keywords

ACTIVATION/DEACTIVATION; FIGURE OF MERIT (FOM); HIGH-K DIELECTRIC; LOG-NORMAL DISTRIBUTION; NOISE; RANDOM TELEGRAPH NOISE; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RRAM;

RELIABILITY;

EID: 84880987960     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2013.6532101     Document Type: Conference Paper

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