Resistance instabilities in a filament-based resistive memory

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2013, Pages

  Chen, Frederick T ^a   Lee, Heng Yuan ^a   Chen, Yu Sheng ^a   Rahaman, Shakh Ziaur ^a   Tsai, Chen Han ^a   Tsai, Kan Hsueh ^a   Wu, Tai Yuan ^a   Chen, Wei Su ^a   Gu, Pei Yi ^a   Lin, Yu De ^a   Sheu, Shyh Shyuan ^a   Tsai, Ming Jinn ^a   Lee, Li Heng ^a   Ku, Tzu Kun ^a   Chen, Pang Shiu ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

oxygen vacancies; ReRAM; resistive memory; RRAM; trap limited conduction

Indexed keywords

CURRENT CONDUCTION; LARGE PARTS; NON-VOLATILE MEMORY TECHNOLOGY; RERAM; RESISTIVE MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RRAM; TRAP-LIMITED CONDUCTION;

DEFECTS; ENERGY UTILIZATION; FLASH MEMORY; NONVOLATILE STORAGE; OXYGEN VACANCIES;

RANDOM ACCESS STORAGE;

EID: 84880988154     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2013.6532040     Document Type: Conference Paper

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